Dirac fermions and possible weak antilocalization in LaCuSb2

Chamorro, Juan; Topp, Andreas; Fang, Yawen; Winiarski, Michał J.; Ast, Christian R.; Krivenkov, Maxim; Varykhalov, A.; Ramshaw, B. J.; Schoop, Leslie M.; McQueen, Tyrel M.

doi:10.1063/1.5124685

Cited by 17 publications

(13 citation statements)

References 44 publications

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“…Yet, fully occupied variants of this structure type, such as Ln(Cu + /Ag + )Pn 2 , have been reported to be TSMs. [63][64][65][69][70][71][72][73] In order to demonstrate the predictive value of the the tolerance factor in non-stoichiometric materials, we have performed such a calculation for 56-atom and 112-atom supercells of LaZn 0.5 Sb 2 in structures with representative correlations (special quasi-random cells). Calculation details are provided in the supporting material.…”

Section: Crystallographic Identification Of Square-net-based Tsmsmentioning

confidence: 99%

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The Role of Delocalized Chemical Bonding in Square-Net-Based Topological Semimetals

et al. 2020

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Principles that predict reactions or properties of materials define the discipline of chemistry. In this work we derive chemical rules, based on atomic distances and chemical bond character, which predict topological materials in compounds that feature the structural motif of a square-net. Using these rules we identify over 300 potential new topological materials. We show that simple chemical heuristics can be a powerful tool to 1 arXiv:2002.04611v1 [cond-mat.mtrl-sci] 11 Feb 2020 characterize topological matter. In contrast to previous database-driven materials categorization our approach allows us to identify candidates that are alloys, solid-solutions, or compounds with statistical vacancies. While previous material searches relied on density functional theory, our approach is not limited by this method and could also be used to discover magnetic and statistically-disordered topological semimetals.

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Section: Crystallographic Identification Of Square-net-based Tsmsmentioning

confidence: 99%

“…Several materials in this structure type have been reported to be TSMs; these are CaMnBi 2 , YbMnPn 2 , , LaCuSb 2 , and LaAgPn 2 , with Pn = Sb, Bi. Additionally, there is an intriguing off-stoichiometric structure type: LaZn 0.5 Sb 2 .…”

Section: Predicting Tsms Using the Tolerance Factormentioning

confidence: 99%

The Role of Delocalized Chemical Bonding in Square-Net-Based Topological Semimetals

et al. 2020

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“…Replacement of the Ag site with its homologs, Au and Cu, has been known to cause a drastic change in the CDW properties. In LaCuSb 2 , the temperature dependence of the resistivity is monotonic in contrast with LaAgSb 2 [15], and no phase transition has been reported to date. However, LaAuSb 2 shows a CDW transition with a clear humplike anomaly at T CDW1 ∼ 100 K in resistivity [16,17], as well as LaAgSb 2 , though the T CDW1 is considerably lower than that of LaAgSb 2 .…”

Section: Introductionmentioning

confidence: 98%

Successive destruction of charge density wave states by pressure in LaAgSb2

et al. 2021

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We comprehensively studied the magnetotransport properties of LaAgSb 2 under high pressure up to 4 GPa, which showed unique successive charge density wave (CDW) transitions at T CDW1 ∼ 210 K and T CDW2 ∼ 190 K at ambient pressure. With the application of pressure, both T CDW1 and T CDW2 were suppressed and disappeared at the critical pressures of P CDW1 = 3.0-3.4 GPa and P CDW2 = 1.5-1.9 GPa, respectively. At P CDW1 , the Hall conductivity showed a steplike increase, which is consistently understood by the emergence of a two-dimensional hollow Fermi surface at P CDW1 . We also observed a significant negative magnetoresistance effect when the magnetic field and current were applied parallel to the c axis. The negative contribution was observed in the whole pressure region from 0 to 4 GPa. Shubnikov-de Haas (SdH) oscillation measurements under pressure directly showed the changes in the Fermi surface across the CDW phase boundaries. In P < P CDW2 , three major oscillation components, α, β, and γ , were identified, whose frequencies were increased by application of pressure. The increment rate of these frequencies was considerably larger than that expected from the shrinkage of lattice constant, indicating the unignorable band modification under pressure. In the normal metallic phase above P > P CDW1 , we observed a single frequency of ∼48 T with a cyclotron effective mass of 0.066m 0 , whose cross section in the reciprocal space corresponded to only 0.22% of the first Brillouin zone. Besides, we observed another oscillation component with frequency of ∼9.2 T, which is significantly enhanced in the limited pressure range of P CDW2 < P < P CDW1 . The amplitude of this oscillation was anomalously suppressed in the high-field and low-temperature region, which cannot be explained by the conventional Lifshitz-Kosevich formula.

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“…4 (a), the zero-field resistivity-temperature (-T) curves of the NbSiSb and NbGeSb crystals show monotonically increasing within the entire temperature region (3-300 K), which suggests the metallic ground state of the NbSiSb and NbGeSb. Under a zero magnetic field the residual resistivity ratios (RRR) of the NbSiSb and NbGeSb are approximately 3.6 and 8.0, respectively, which is much lower than ZrSiS (~84) [11], slightly lower than ZrGeSe (14.9) [23], and similar to LaCuSb 2 (8.4) [24]. The entire T behavior of the NbSiSb and NbGeSb can be described in three different regions : 1) for temperature less than 10 K, the resistivity is almost constant for both single crystals, which are similar to the other semimetal systems [25,26]; 2) between 10 K and 75 K, the resistivity can be quite well fitted using the equation (T)= 0 +AT n with n ~2.4 for the NbSiSb, and ~2.49 for the NbGeSb, where  0 is the residual resistivity, A is a constant, and n is a parameter indicating scattering mechanisms.…”

Section: Resultsmentioning

confidence: 95%

Magnetotransport properties of square-net compounds of NbSiSb and NbGeSb single crystals

Guo¹,

Zhao²,

Ding³

et al. 2020

J. Phys.: Condens. Matter

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We successfully grew single crystals of Si-and Ge-square-net compounds of NbSiSb and NbGeSb whose excellent crystalline quality are verified using single-crystal x-ray diffraction -2 scans, rocking curves, scanning and transmission electron microscopies. Since these two compounds share major crystallographic similarity with the topological nodal-line semimetals of ZrSiS family, we employ density functional theory (DFT) calculations and magnetotransport measurements to demonstrate their band structures as well as the electron scattering mechanisms. DFT calculations show that the fermiology shows strong anisotropy from the crystallographic c-axis to the ab-plane and weak anisotropy within the ab plane, which is consistent with the strong anisotropic magnetotransport behaviors. Following the Kohler's scaling rule we prove that similar interband and intraband electron-phonon scattering mechanisms work in both the NbSiSb and NbGeSb compounds. The study of electronic transport mechanism in the presence of external magnetic field renders deep insight into topological behavior together with it's Fermi surface, and the high similarity of crystallography and strong difference in band structures between the present single crystals and that of ZrSiS family provides the possibility to tune the band structure via element doping

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Dirac fermions and possible weak antilocalization in LaCuSb2

Cited by 17 publications

References 44 publications

The Role of Delocalized Chemical Bonding in Square-Net-Based Topological Semimetals

The Role of Delocalized Chemical Bonding in Square-Net-Based Topological Semimetals

Successive destruction of charge density wave states by pressure in LaAgSb2

Magnetotransport properties of square-net compounds of NbSiSb and NbGeSb single crystals

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