Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

Joe, Sung-Min; Kang, Hyo; Choi, Nagyong; Kang, Min-Ho; Park, Byung‐Gook; Lee, Jong-Ho

doi:10.1109/ted.2016.2533019

Cited by 18 publications

(7 citation statements)

References 17 publications

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“…The operation mechanism based on the positive feedback helps the Z 2 ‐FET achieve outstanding performances: very sharp subthreshold swing and high I ON / I OFF ratio. Based on these unique properties, the Z 2 ‐FET has shown a series of applications in electrostatic discharge (ESD) protection, [ 53 ] dynamic random access memory (DRAM), [ 54 ] novel flash memory, [ 55 ] etc.…”

Section: Photodetectors With High Internal Gainmentioning

confidence: 99%

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Liu

Cristoloveanu

Wan

2021

Physica Status Solidi (a)

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The family of photodetectors plays an important role in multiple applications. Extensive research and continuous development of photodetectors has enriched their functionalities and improved their performances. The silicon-on-insulator (SOI) technology extends the concepts and merits of photodetectors. Herein, the recent progress of the SOI-based photodetectors is reviewed from the viewpoint of operation principles and performances. Silicon and Germanium photodiodes with conventional PIN structure are discussed first. Photodetectors with novel operating mechanism and high internal gain are then presented: avalanche photodiode on SOI, innovative photo-Z 2 -field effect transistor (FET), and devices based on interface coupling. Superior functionalities, such as wavelength detection, dynamically tunable responsivity and response spectrum, are demonstrated. At last, the technology of active pixel sensors on SOI is reviewed.

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Section: Photodetectors With High Internal Gainmentioning

confidence: 99%

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Liu

Cristoloveanu

Wan

2021

Physica Status Solidi (a)

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“…Electronics 2020, 9, 268 2 of 7 through WL10) and bottom cells (WL0 through WL4) were divided and the NLSB generated by the WL was analyzed [14][15][16]. Therefore, it is necessary to explain the different potential boosting phenomena occurring at each WL.…”

Section: Structure and Simulationsmentioning

confidence: 99%

“…Previous studies analyzed how the NLSB phenomenon occurs when the bias applied to the selected WL or the pattern of adjacent cells changes [10][11][12][13]. In this study, the top cells (WL11 through WL15), middle cells (WL6 through WL10) and bottom cells (WL0 through WL4) were divided and the NLSB generated by the WL was analyzed [14][15][16]. Therefore, it is necessary to explain the different potential boosting phenomena occurring at each WL.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Inhibited Channel Potential of 3D NAND Flash Memory According to Word-Line Location

et al. 2020

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Natural local self-boosting (NLSB) was analyzed according to the location of a selected word-line (WL) where potential boosting occurs. When the same pattern occurred, it was found that the top cells (WL11 through WL15) and bottom cells (WL0 through WL4) have identically symmetrical potential boosting. In addition, in the region of the middle cells (WL6 through WL10), a slight change in the potential boosting was also almost the same. In the 3D NAND, where there was a dummy WL (DWL), the NLSB for the edge WL changed as the pattern of the DWL changed. The DWL did not affect the NLSB of the main cell, regardless of the pattern. Therefore, the high potential of the edge WL could reduce the potential difference between the main cell and the edge WL using the DWL.

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“…[9][10][11][12] However, this leads to new problems such as the down-coupling phenomenon (DCP) and natural local self-boosting (NLSB) effect because the channels are not directly connected to the substrate. [13][14][15] As the 3D NAND main cell channel can easily be in the floating state, the DCP and NLSB effect occur. The DCP can reduce the boosting efficiency of the inhibit channel and increase program disturb during the program operation.…”

Section: Introductionmentioning

confidence: 99%

Optimal dummy word line condition to suppress hot carrier injection phenomenon due to the natural local self-boosting effect in 3D NAND flash memory

Jeong¹,

Ham²,

Han³

et al. 2020

Jpn. J. Appl. Phys.

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The main cell channel in 3D NAND flash structures easily goes into the floating state, because it is not directly connected to the substrate, resulting in the down-coupling phenomenon (DCP). As DCP reduces the boosting potential of the inhibit string during the program and verify operations, the natural local self-boosting (NLSB) effect is reduced, which in turn reduces the channel potential and causes a program disturb. However, if the channel potential of the selected word line (WL) is significantly increased by excessive NLSB, a hot carrier injection (HCI) occurs due to the potential difference between the adjacent WLs, even at a low channel potential. Therefore, we introduced a dummy WL to reduce HCI.

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Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback

Cited by 18 publications

References 17 publications

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Investigation of Inhibited Channel Potential of 3D NAND Flash Memory According to Word-Line Location

Optimal dummy word line condition to suppress hot carrier injection phenomenon due to the natural local self-boosting effect in 3D NAND flash memory

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