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We present a model for the tunneling field-effect transistor (TFET) comprising a series connection of a metal-oxide-semiconductor FET (MOSFET) with a gate-controllable tunneling diode. Through the introduction of MOSFET in the model, both operational regimes of TFET are handled correctly, with the tunneling diode dominating at low interband tunneling current and the MOSFET component dominating at high tunneling current. The comparison between our model, TCAD simulations and experimental data on TFETs with different gate oxide and channel thicknesses over the full range of gate and drain bias confirms the model's reliability and accuracy. At low tunneling current, the model further simplifies to a compact analytical model. With minor modifications, our model can also be applied to multi-gate TFET architectures. V