Dilute magnetic semiconductor (In,Mn)Sb: Transport and magnetic properties

Иванов, В. А.; Пашкова, О. Н.; Саныгин, В. П.; Sheverdyaeva, P. M.; Прудников, В. В.; Перов, Н. С.; Падалко, А. Г.

doi:10.1016/j.jmmm.2006.10.936

Cited by 11 publications

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Обнаружена анизотропия физических свойств и выявлены особенности механизмов электронных и фононных процессов, определена роль включений, а также межфазных слоев вокруг них в транспортные свойства. Имеется много публикаций, посвященных синтезу и изучению магнитных свойств этих эвтектик [6][7][8][9][10][11]. Однако динамические характеристики недостаточно исследованы.…”

Section: Introductionunclassified

Комбинационное рассеяние света в эвтектическом композите InSb-MnSb

Мамедов¹,

Араслы²,

Рагимов³

et al. 2020

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Raman spectra of bulk samples of the InSb-MnSb eutectic composite and their thin films prepared by the flash evaporation method have been studied. In the Raman spectra observed TO and LO modes at frequencies of 179.5 cm-1 and 192.4 cm-1 correspond to InSb compound and also the peaks at frequencies 122 cm-1, 127 cm-1, 167 cm-1, 211 cm-1, 245.5 cm-1 correspond to theoretical data for MnSb as is well known from literature. The TO mode in the Raman spectra for films is shifted toward lower energies (178 cm-1), but the LO mode is higher (196 cm-1). The high-frequency shift of the LO mode in the composite with compared its value for InSb is probably due to the presence of deformation at the matrix-inclusion interface, as well as the contribution by surface phonons scattering.

show abstract

Section: Introductionunclassified