Cluster ferromagnetism in Mn-doped InSb

Иванов, В. А.; Пашкова, О. Н.; Ugolkova, E. A.; Саныгин, В. П.; Galéra, Rose-Marie

doi:10.1134/s0020168508100026

Cited by 25 publications

(5 citation statements)

References 27 publications

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“…This is connected to an intrinsic limitation of T C or to the onset of the carrier‐induced ferromagnetism in a system of substitutional Mn ions, which has been predicted to lie well below the room temperature for the majority of the III–V DMS . At the same time, the values of T C as high as 130 K in bulk InMnSb and even exceeding the room temperature in polycrystalline bulk and film InMnSb samples were attributed to MnSb precipitates . The results above propose an effective way to elevation of T C in intentionally inhomogeneous DMS, namely in those containing nanosize FM inclusions.…”

Section: Introductionmentioning

confidence: 80%

InSb:Mn – A high temperature ferromagnetic semiconductor

Lähderanta

Lashkul

Kochura

et al. 2014

Physica Status Solidi (a)

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Diluted magnetic semiconductor InSb:Mn exhibits a ferromagnetic behavior up to T ∼ 600 K due to presence of nanosize MnSb precipitates [Kochura et al., J. Appl. Phys. 113, 083905 (2013)]. Transport properties of InSb:Mn, including the resistivity, the magnetoresistance (MR), and the Hall effect, are investigated between T ∼ 1.6 and 300 K in magnetic fields B up to 15 T. The resistivity, ρ(T), displays an upturn with lowering the temperature below T ∼ 10–20 K attributable to the Kondo effect, where the universal Kondo behavior is observed. The Hall resistivity, ρH, demonstrates a nonlinear dependence on B up to T ∼ 300 K, suggesting an anomalous contribution due to the effect of the MnSb nanoprecipitates. The relative MR, Δρ(B)/ρ(0), is positive (pMR) above T ∼ 10 K and transforms into a negative one (nMR) with lowering temperature. The Hall effect and pMR are interpreted simultaneously with the two‐band model, addressed to presence of the two types of holes with quite different concentrations and mobilities. The dependences of nMR on B and T follow those of the Khosla–Fischer model, taking into account damping of the spin‐dependent scattering of charge carriers in magnetic field.

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Section: Introductionmentioning

confidence: 80%

InSb:Mn – A high temperature ferromagnetic semiconductor

Lähderanta

Lashkul

Kochura

et al. 2014

Physica Status Solidi (a)

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“…For the In 1−x Mn x Sb samples with x = 1÷1.3% Mn prepared by the same group, such suggestion was earlier invented in Ref. [28]. Indeed, the equilibrium solubility of Mn in III-V compounds is quite low and, if the Mn concentration is beyond the solubility limit, one should expect a formation of nano-regions with different concentration of magnetic ions.…”

Section: Magnetic Properties: Experimentsmentioning

confidence: 95%

“…The occurrence of robust ferromagnetism at room temperature in bulk (InMn)Sb semiconductors with Mn up to 1.33% was reported in Refs. [28,31]. However, the authors were not able to determine whether the magnetism is truly a bulk phenomenon.…”

Section: Magnetic Properties: Experimentsmentioning

confidence: 97%

Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor

Krivoruchko

Tarenkov

Varyukhin

et al. 2010

Journal of Magnetism and Magnetic Materials

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Narrow-gap higher mobility semiconducting alloys In 1−x Mn x Sb were synthesized in polycrystalline form and their magnetic and transport properties have been investigated. Ferromagnetic response in In 0.98 Mn 0.02 Sb was detected by the observation of clear hysteresis loops up to room temperature in direct magnetization measurements. An unconventional (reentrant) magnetization versus temperature behavior has been found. We explained the observed peculiarities within the frameworks of recent models which suggest that a strong temperature dependence of the carrier density is a crucial parameter determining carrier-mediated ferromagnetism of (III,Mn)V semiconductors. The correlation between magnetic states and transport properties of the sample has been discussed. The contact spectroscopy method is used to investigate a band structure of (InMn)Sb near the Fermi level. Measurements of the degree of charge current spin polarization have been carried out using the point contact Andreev reflection (AR) spectroscopy. The AR data are analyzed by introducing a quasiparticle spectrum broadening, which is likely to be related to magnetic scattering in the contact. The AR spectroscopy data argued that at low temperature the sample is decomposed on metallic ferromagnetic clusters with relatively high spin polarization of charge carriers (up to 65% at 4.2K) within a cluster.

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“…As shown by electron probe X ray microanalysis, when semiconductor InSb is quenched from the liquid state, doping of samples reduces to the doping of defects in the crystal lattice of the semiconductor [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Microstructure of quenched doped InSb

et al. 2014

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Magnetic characterization results indicate that, after liquid quenching, InSb samples doped with manganese, manganese + zinc, and manganese + cadmium are magnetic semiconductors. According to microstructural analysis data, polished sections of these materials demonstrate surface order: the grains have the form of wedges directed from the periphery of the section to its center, occupy essentially the entire sur face of the section, and have low angle boundaries with dislocation outcrops on the sample surface. Accord ing to X ray diffraction data, quenched doped InSb samples are free of impurity phases and have preferential crystallographic orientations. Analysis of the present experimental data leads us to conclude that the surfaces of metallographic specimens of doped InSb are sections through textures whose orientation-under given quenching conditions-depends on the dopant composition.

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Cluster ferromagnetism in Mn-doped InSb

Cited by 25 publications

References 27 publications

InSb:Mn – A high temperature ferromagnetic semiconductor

InSb:Mn – A high temperature ferromagnetic semiconductor

Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor

Microstructure of quenched doped InSb

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