InSb:Mn – A high temperature ferromagnetic semiconductor

Abstract

Diluted magnetic semiconductor InSb:Mn exhibits a ferromagnetic behavior up to T ∼ 600 K due to presence of nanosize MnSb precipitates [Kochura et al., J. Appl. Phys. 113, 083905 (2013)]. Transport properties of InSb:Mn, including the resistivity, the magnetoresistance (MR), and the Hall effect, are investigated between T ∼ 1.6 and 300 K in magnetic fields B up to 15 T. The resistivity, ρ(T), displays an upturn with lowering the temperature below T ∼ 10–20 K attributable to the Kondo effect, where the universal Kondo behavior is observed. The Hall resistivity, ρH, demonstrates a nonlinear dependence on B up to T ∼ 300 K, suggesting an anomalous contribution due to the effect of the MnSb nanoprecipitates. The relative MR, Δρ(B)/ρ(0), is positive (pMR) above T ∼ 10 K and transforms into a negative one (nMR) with lowering temperature. The Hall effect and pMR are interpreted simultaneously with the two‐band model, addressed to presence of the two types of holes with quite different concentrations and mobilities. The dependences of nMR on B and T follow those of the Khosla–Fischer model, taking into account damping of the spin‐dependent scattering of charge carriers in magnetic field.

Composites based on self-assembled MnAs ferromagnet nanoclusters embedded in ZnSnAs2 semiconductor

“…On the other hand, it has been shown that already in the pure as-grown ZnSnAs 2 film the observed dependences of µ(T) and p(T) satisfy reasonably those of the two-band conduction mechanism, taking into account the holes in the valence band and in the acceptor band [26]. It is worth mentioning the two-band conduction, observed in the II-V semiconductor CdSb [27] and in the III-V based In 1-x Mn x Sb [28], permitting a detailed quantitative explanation of the resistivity and the Hall effect data in strong magnetic fields. The situation with the transport data in the ZnSnAs 2 + MnAs samples at this point is even more complicated than in a pure ZnSnAs 2 compound, suggesting existence of an additional conduction channel or additional type of carriers, associated with MnAs inclusions and having concentrations and mobilities, which differ drastically from those in the pure ZnSnAs 2 compound.…”

Negative magnetoresistance in indium antimonide whiskers doped with tin

“…Negative magnetoresistance (NMR) was observed in InSb crystals at low temperatures and weak magnetic fields [1][2][3][4][5][6][7][8][9]. There are various interpretations of this effect due to different mechanisms of scattering of charge carriers.…”

“…There are various interpretations of this effect due to different mechanisms of scattering of charge carriers. In particular: 1) surface boundary scattering [1,2]; 2) scattering on magnetic impurities [3][4][5]; 3) scattering on nonmagnetic impurities with concentration in the vicinity to metal-insulator transition (MIT) [5][6][7][8][9].…”

“…Magnetic and transport properties of indium antimonide doped with manganese were studied in the temperature range 1.6-300 K and magnetic fields up to 15 T [3,4]. Negative magnetoresistance was revealed in diluted magnetic semiconductor InSb:Mn with nanosize MnSb precipitates [4].…”

Magnetotransport properties of InSb-MnSb nanostructured films

“…They demonstrate ferromagnetism and spin-depended scattering above the room temperature. An influence of the ferromagnetic MnSb inclusions on magnetic and electrical properties of InSb/MnSb nanostructures was observed both in bulk [15][16][17] and in films [18,19].…”