Composites based on self-assembled MnAs ferromagnet nanoclusters embedded in ZnSnAs2 semiconductor

Федорченко, И. В.; Kilański, Ł.; Zakharchuk, I.; Geydt, Pavel; Lähderanta, E.; Vasil’ev, P. N.; Симоненко, Е. П.; Aronov, A. N.; Dobrowolski, W.; Маренкин, С. Ф.

doi:10.1016/j.jallcom.2015.08.006

Cited by 18 publications

(6 citation statements)

References 28 publications

(29 reference statements)

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“…It has been shown that in the pure as-grown ZnSnAs 2 films the observed μ(T ) and p(T ) dependencies can be satisfactorily explained with the use of the two-band conduction mechanism, taking into account two p-type conduction channels related to holes in the valence band and in the acceptor band [33]. Both μ(T ) and p(T ) dependencies observed for our Zn −x 1 Mn xSnSb 2 samples with ¯> x 0.066 are similar to the results reported for ZnSnAs 2 :MnAs nanocomposite system [29]. Considering those results we believe that in our Zn −x 1 Mn xSnSb 2 samples with ¯> x 0.066 there exists an additional conduction channel or additional type of carriers, associated with MnSb inclusions and having concentrations and mobilities which differ drastically from those in the pure ZnSnSb 2 compound.…”

Section: Magnetotransport Datasupporting

confidence: 84%

“…We observe a large Hall carrier concentration in all studied samples, with values from × 5 10 20 cm −3 for the sample with ¯= x 0.138 up to about × 1.3 10 22 cm −3 for the sample with ¯= x 0.027. Such high hole concentration in semiconductors is usually related to a large defect concentration in the material and was observed in ZnSnSb 2 [28] and other II-IV-V 2 semiconductors such as ZnSnAs 2 [29]. The Hall hole concentration varies with the change in the Mn content of the samples.…”

Section: Magnetotransport Datamentioning

confidence: 94%

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High temperature magnetic order in Zn_1−xMn_xSnSb₂+MnSb nanocomposite ferromagnetic semiconductors

Kilański

Górska

Ślawska‐Waniewska

et al. 2016

J. Phys.: Condens. Matter

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We present studies of structural, magnetic, and electrical properties of Zn1-x Mn x SnSb2+MnSb nanocomposite ferromagnetic semiconductors with the average Mn-content, [Formula: see text], changing from 0.027 up to 0.138. The magnetic force microscope imaging done at room temperature shows the presence of a strong signal coming from MnSb clusters. Magnetic properties show the paramagnet-ferromagnet transition with the Curie temperature, T C, equal to about 522 K and the cluster-glass behavior with the transition temperature, T CG, equal to about 465 K, both related to MnSb clusters. The magnetotransport studies show that all investigated samples are p-type semiconductors with high hole concentration, p, changing from 10(21) to 10(22) cm(-3). A large increase in the resistivity as a function of the magnetic field is observed at T < 10 K and small magnetic fields, [Formula: see text] mT, for all the studied samples with a maximum amplitude of the magnetoresistance about 460% at T = 1.4 K. The large increase in the resistivity is most probably caused by the appearance of the superconducting state in the samples at T < 4.3 K.

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Section: Magnetotransport Datasupporting

confidence: 84%

Section: Magnetotransport Datamentioning

confidence: 94%

High temperature magnetic order in Zn_1−xMn_xSnSb₂+MnSb nanocomposite ferromagnetic semiconductors

Kilański

Górska

Ślawska‐Waniewska

et al. 2016

J. Phys.: Condens. Matter

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“…To their knowledge, this is the only effect that provides a linear positive field dependence. Non-saturating linear positive magnetoresistance (LPMR) due to microscopic conductance fluctuations can appear [14] which in our nanocomposites may be related to cluster agglomerates and the clusters' random deposition.…”

Section: Field-dependent Magnetoresistance Effectsmentioning

confidence: 97%

“…Standard fabrication methods like molecular beam epitaxy, ion implantation, co-sputtering or pulsed laser deposition have been used to create DMSs out of elemental and multicomponent semiconductors embedding both 3d and 4f elements, e.g., Ge:Mn [8][9][10] and ZnO:Fe [11,12]. Ferromagnetic inclusions are not necessarily composed of the pure ferromagnetic dopant only, but they can also be a ferromagnetic alloy, e.g., ZnSnAs 2 :MnAs [13,14]. In some cases, thermite reactions can also be applied to synthesize DMSs [15].…”

Section: Introductionmentioning

confidence: 99%

Magnetotransport Properties of Ferromagnetic Nanoparticles in a Semiconductor Matrix Studied by Precise Size-Selective Cluster Ion Beam Deposition

et al. 2020

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The combination of magnetic and semiconducting properties in one material system has great potential for integration of emerging spintronics with conventional semiconductor technology. One standard route for the synthesis of magnetic semiconductors is doping of semiconductors with magnetic atoms. In many semiconductor–magnetic–dopant systems, the magnetic atoms form precipitates within the semiconducting matrix. An alternative and controlled way to realize such nanocomposite materials is the assembly by codeposition of size-selected cluster ions and a semiconductor. Here we follow the latter approach to demonstrate that this fabrication route can be used to independently study the influence of cluster concentration and cluster size on magneto-transport properties. In this case we study Fe clusters composed of approximately 500 or 1000 atoms softlanded into a thermally evaporated amorphous Ge matrix. The analysis of field and temperature dependent transport shows that tunneling processes affected by Coulomb blockade dominate at low temperatures. The nanocomposites show saturating tunneling magnetoresistance, additionally superimposed by at least one other effect not saturating upon the maximum applied field of 6 T. The nanocomposites’ resistivity and the observed tunneling magnetoresistance depend exponentially on the average distance between cluster surfaces. On the contrary, there is no notable influence of the cluster size on the tunneling magnetoresistance.

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“…The maximum value of the Hall carrier mobility observed for the studied Zn x 1-Cd x GeAs 2 sample with x = 1 is also, to our knowledge, the highest mobility value observed for the CdGeAs 2 compound. The other II-IV-V 2 compounds show relatively low mobility values, for example for CdGeAs 2 not exceeding 200 cm 2 (V • s) −1 [29], for ZnGeAs 2 not exceeding 50 cm 2 (V • s) −1 [28], for ZnSnAs 2 not higher than 200 cm 2 (V • s) −1 [34], and for ZnSnSb 2 not exceeding 40 cm 2 (V • s) −1 [35].…”

Section: Transport and Magnetotransport Propertiesmentioning

confidence: 98%

Composite Zn_1−xCd_xGeAs₂semiconductors: structural and electrical properties

Kilański

Reszka

Górska

et al. 2016

J. Phys.: Condens. Matter

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We present the studies of structural, transport and magnetotransport properties of [Formula: see text]Cd GeAs crystals with the chemical content changing from 0 to 1. The structural studies indicate that this alloy exists as a composite two-phase material in almost the entire range of average chemical compositions. The two phase nature of our samples does have a significant influence on the carrier transport and magnetotransport of the composite alloy. The change of the conductivity type is observed at room temperature, from p-type for [Formula: see text] to n-type for x > 0.18, respectively. The Hall carrier mobility measured at room temperature decreases as a function of x from about 35 cm (V · s) for the sample with x = 0 down to 3 cm (V · s) for the sample with x = 0.233. For x > 0.233 the Hall carrier mobility shows an increase with x, up to the highest value around 875 cm (V · s) observed for the sample with x = 1. Temperature dependent resistivity measurements indicate the presence of thermal activation of carriers with activation energy, E , with values from 20 to 30 meV for all the studied samples. The temperature dependent Hall effect data show that the grain boundary limited transport is strong in all our samples. For the samples with [Formula: see text] the negative MR is observed at temperatures lower than 100 K and at low magnetic field values, [Formula: see text] T. This effect is interpreted as a weak localization phenomenon with low values of phase coherence length, [Formula: see text] nm.

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Composites based on self-assembled MnAs ferromagnet nanoclusters embedded in ZnSnAs2 semiconductor

Cited by 18 publications

References 28 publications

High temperature magnetic order in Zn_1−xMn_xSnSb₂+MnSb nanocomposite ferromagnetic semiconductors

High temperature magnetic order in Zn_1−xMn_xSnSb₂+MnSb nanocomposite ferromagnetic semiconductors

Magnetotransport Properties of Ferromagnetic Nanoparticles in a Semiconductor Matrix Studied by Precise Size-Selective Cluster Ion Beam Deposition

Composite Zn_1−xCd_xGeAs₂semiconductors: structural and electrical properties

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Composites based on self-assembled MnAs ferromagnet nanoclusters embedded in ZnSnAs2 semiconductor

Cited by 18 publications

References 28 publications

High temperature magnetic order in Zn1−xMnxSnSb2+MnSb nanocomposite ferromagnetic semiconductors

High temperature magnetic order in Zn1−xMnxSnSb2+MnSb nanocomposite ferromagnetic semiconductors

Magnetotransport Properties of Ferromagnetic Nanoparticles in a Semiconductor Matrix Studied by Precise Size-Selective Cluster Ion Beam Deposition

Composite Zn1−xCdxGeAs2semiconductors: structural and electrical properties

Contact Info

Product

Resources

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High temperature magnetic order in Zn_1−xMn_xSnSb₂+MnSb nanocomposite ferromagnetic semiconductors

High temperature magnetic order in Zn_1−xMn_xSnSb₂+MnSb nanocomposite ferromagnetic semiconductors

Composite Zn_1−xCd_xGeAs₂semiconductors: structural and electrical properties