Diffusion of vanadium in GaAs

Magnesium diffusion profile in GaN grown by MOVPE

“…The gradual SIMS backward decay at each GaN:nid/ GaN:Mg interface can be essentially ascribed to the Mg diffusion phenomenon. The impurity diffusion profile follows in general, the Fick's law (Gaussian form) [15], which is written as follows:…”

Preparation and characterization of polyethersulfone microfiltration membranes by a 2-methoxyethanol additive

“…The viscosity decreased exponentially with the increased temperature. Also Bchetnia et al [27] presented that the diffusivity obeys the Arrhenius law, as well. It can be inferred that diffusivity should increase exponentially with increased temperature.…”

Growth of vanadium-doped GaN by MOVPE

“…At 1120 1C and for the different V-doping amount, the V diffusion coefficient was almost constant at about 10 À14 cm 2 s À1 . At this temperature, the Arrhenius relationship of the V diffusion in GaAs [22] gives an extrapolated value of about 8.2 Â 10 À12 cm 2 s À1 . This value is about three orders of magnitude higher than the V diffusion coefficient in GaN.…”

“…Diffusion coefficients of V were calculated at the different GaN:V/ GaN interface, by the best fit to the SIMS profile by the Fick's diffusion equation (see Ref. [22] for details). At 1120 1C and for the different V-doping amount, the V diffusion coefficient was almost constant at about 10 À14 cm 2 s À1 .…”