Growth of vanadium-doped GaN by MOVPE

Souissi, M.; Bchetnia, A.; Jani, B. El

doi:10.1016/j.jcrysgro.2005.01.070

Cited by 22 publications

(13 citation statements)

References 35 publications

(37 reference statements)

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“…The values are measured after annealing have increased when compared to the ones before annealing. The values are the following: 283 and 366 arcsec for the (0 0 0 2) reflection, and a FWHM of 339 and 410 arcsec for the (1 0 1 5)reflection, respectively [11]. The X-rocking curve ray for the symmetric (0 0 0 2) reflecting plane is related with screw and mixed dislocations.…”

Section: Resultsmentioning

confidence: 97%

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The annealing effects of V-doped GaN thin films grown by MOCVD

Souissi¹,

Bouzidi²,

Jani³

2012

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 97%

“…Finally, V-doped GaN took place at 1120 1C by simultaneously introducing TMGa and VCl 4 into the reactor. Specific details of the growth conditions have been reported elsewhere [10,11]. After growth, the GaN:V layers were thermally annealed at 1075 1C for 30 min in the nitrogen atmosphere.…”

Section: Methodsmentioning

confidence: 99%

The annealing effects of V-doped GaN thin films grown by MOCVD

Souissi¹,

Bouzidi²,

Jani³

2012

Journal of Crystal Growth

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“…Therefore deep acceptors are commonly used to compensate the undesired background donors, and reduce problems of current leakage, punchthrough, or short‐channel effects . These can be introduced by doping the GaN layers with carbon, iron, or less commonly with other transition metals such as vanadium . The drawback in such approach is that these acceptors can act also as traps for the two‐dimensional electron gas (2DEG) formed at the GaN (channel)/AlGaN (barrier) interface, which is the core of a HEMT structure.…”

Section: Introductionmentioning

confidence: 99%

“…[8] These can be introduced by doping the GaN layers with carbon, [9][10][11] iron, [12,13] or less commonly with other transition metals such as vanadium. [14] The drawback in such approach is that these acceptors can act also as traps for the two-dimensional electron gas (2DEG) formed at the GaN (channel)/ AlGaN (barrier) interface, which is the core of a HEMT structure. This eventually results in the current collapse phenomenon, [15] which is detrimental for devices.…”

Section: Introductionmentioning

confidence: 99%

Suppression of Iron Memory Effect in GaN Epitaxial Layers

Benkhelifa

Kirste

Manz

et al. 2017

Physica Status Solidi (b)

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AlGaN/GaN High Electron Mobility Transistors (HEMTs) require a semi‐insulating buffer to compensate a high background donor concentration and to prevent parasitic effects, such as parallel conduction. Iron and carbon are typical impurities used for such purpose, since they can behave as deep acceptors in GaN layers. The former (Fe) brings as drawback a well‐known memory effect which consists in the segregation of Fe atoms through the GaN layers, requiring thick undoped layers to keep the two‐dimensional electron gas (2DEG) away from such electron traps. The latter (C), although easier to incorporate in the GaN layers and free of any memory effect, could cause current collapse. In this study we investigate the effect of differently strained epitaxial layers on Fe‐segregation. HEMT structures were grown on sapphire substrates by MOCVD. By growing the Fe‐doped layers under unusual growth conditions (low temperature, or as AlGaN), or by adding an interlayer (AlN, 5× AlN/GaN, or C‐doped GaN) between the doped and undoped epitaxial layers, we have succeeded in limiting the Fe segregation within 200 nm of undoped GaN layer instead of the typically required 800 nm, as proven by SIMS. While the morphology and the crystal quality of the HEMT structures have been affected to a very low extent, the electrical characteristics have benefitted from such interlayers. Higher carrier mobility and lower sheet resistance distinguish such epitaxial structures. Further benefits are expected by the device performance such as reduced soft‐subthreshold behavior (soft‐breakdown) and dispersion effects.

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“…Finally, V-doped GaN take place at 1120 °C by introducing simultaneously TMGa and VCl 4 into the reactor. Specific details of the growth conditions have been reported elsewhere [15,16]. The x-ray diffraction measurement was carried out using a Bruker D8 ADVANCE diffractometer equipped with a dynamic scintillation detector and a copper wavelength K α1 radiation (λ=0.154056 nm) in a symmetric Ө-2Ө geometry.…”

Section: Introductionmentioning

confidence: 99%

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

Souissi

Schmerber

Derory

et al. 2010

Phys. Status Solidi (c)

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V‐doped GaN thin films were grown on c‐sapphire substrate by metal organic chemical vapour deposition method (MOCVD). We have used vanadium tetrachloride (VCl4) to intentionally incorporate vanadium (V) during the crystal growth of GaN. X‐ray diffraction measurements revealed no secondary phase in the samples.Magnetic experiments using superconducting quantum interference device (SQUID) showed clear hysteresis loop in magnetization versus applied field (M –H) curves for V‐doped GaN films. The ferromagnetic behavior was evidenced at 300 K, implying the Curie temperature to be over 300 K. Strong and broad blue‐luminescent band (centered at 2.6 eV) is induced by the V doping in GaN. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of vanadium-doped GaN by MOVPE

Cited by 22 publications

References 35 publications

The annealing effects of V-doped GaN thin films grown by MOCVD

The annealing effects of V-doped GaN thin films grown by MOCVD

Suppression of Iron Memory Effect in GaN Epitaxial Layers

Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

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