Room‐temperature ferromagnetism in V‐doped GaN thin films grown by MOCVD

Abstract

V‐doped GaN thin films were grown on c‐sapphire substrate by metal organic chemical vapour deposition method (MOCVD). We have used vanadium tetrachloride (VCl4) to intentionally incorporate vanadium (V) during the crystal growth of GaN. X‐ray diffraction measurements revealed no secondary phase in the samples.Magnetic experiments using superconducting quantum interference device (SQUID) showed clear hysteresis loop in magnetization versus applied field (M –H) curves for V‐doped GaN films. The ferromagnetic behavior was evidenced at 300 K, implying the Curie temperature to be over 300 K. Strong and broad blue‐luminescent band (centered at 2.6 eV) is induced by the V doping in GaN. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system

“…As a key material for spintronics devices, magnetic semiconductors have received extensive and continuous attention because of their intrinsic semiconductor properties and ferromagnetism (FM), which involve using both the charge and spin properties of electrons. Effectively doped GaN-based magnetic semiconductors have physical properties, such as high Curie temperature [8] and excellent magnetic and optical properties [9], making them popular materials for research in magnetic semiconductors.…”