Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD

Souissi, M.; Schmerber, G.; Derory, A.; Jani, B. El

doi:10.1016/j.jmmm.2012.03.039

Cited by 6 publications

(4 citation statements)

References 14 publications

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“…The optimized lattice parameters were not significantly affected by the implementation of the isolated magnetic MLs and were about the same as obtained for bulk GaN (a ¼ 3.22 Å and c/a ¼ 1.63); this fact agrees with previous experimental 17 and theoretical works. 22 In the second part of this work, we focus our attention on the electronic properties of GaN/V and GaN/Cr, the only DMHs with FM ground state (among the seven studied ones). The standard SDFT-GGA leads to a charge density overdelocalization of d orbitals and to an underestimation of the energy gap.…”

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confidence: 99%

“…We obtained for the GaN/V DMH a T c ¼ 1394 K, and for GaN/ Cr DMH a T c ¼ 555 K. There are in the litterature results only for bulk systems. In 2012, three different papers pointed ferromagnetism for bulk GaVN above RT: one of them is an experimental work 22 (which measured T c ¼ 350 K), and the other two are theoretical works, which predicted T c > RT 42 and T c > 350 K. 42 Concerning bulk GaCrN, many experimental measurements have pointed [43][44][45][46][47] a T c lying in the interval 320 K to 460 K. Our results for 2D GaN/V and GaN/ Cr system follow the trend already observed for bulk GaVN 22,42,48 and GaCrN: [43][44][45][46][47]49 above RT T c . Contrasting DMHs approach with the usual DMSs, regarding the same materials, the main difference is that DMHs present a 2D region of extremely high concentration of TM atoms, which, in principle, can favor magnetic ordering, thus leading to higher Curie temperatures, in agreement with our previous results.…”

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confidence: 99%

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Digital magnetic heterostructures based on GaN using GGA-1/2 approach

Santos

Marques

Ferreira

et al. 2012

Applied Physics Letters

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We present ab-initio calculations of seven digital magnetic heterostructures, GaN δ-doped with V, Cr, Mn, Fe, Co, Ni, and Cu, forming two-dimensional systems. Only GaN δ-doped with V or Cr present a ferromagnetic ground state with high Curie temperatures. For both, to better describe the electronic properties, we used the GGA-1/2 approach. The ground state of GaN/Cr resulted in a two dimensional half-metal, with 100% spin polarization. For GaN/V, we obtained an insulating state: integer magnetic moment of 2.0 μB, a minority spin gap of 3.0 eV close to the gap of GaN, but a majority spin gap of 0.34 eV.

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confidence: 99%

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Digital magnetic heterostructures based on GaN using GGA-1/2 approach

Santos

Marques

Ferreira

et al. 2012

Applied Physics Letters

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“…Extensive theoretical studies have been discussed this phenomenon in III-V DMSs and investigate their half-metallic ferromagnetic behaviour. They conclude that III-V DMSs are from the better candidates of spintronic applications [22][23][24][25][26][27][28][29][30][31][32][33][34][35] InP and BP crystallized in a face-centred cubic at zincblend structure with space group of F 43m and coordinate in tetrahedral symmetry. Their lattice parameters are 5.868 and 4.538Å, respectively, for InP and BP.…”

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confidence: 99%

First-Principle Study of Electronic and Half-Metallic Ferromagnetic Properties of Vanadium (V)-Doped Cubic BP and InP

Boutaleb¹,

Doumi²,

Mokaddem³

et al. 2017

J Supercond Nov Magn

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In this study, we use the first-principle calculations of density functional theory with gradient generalized approximation of Wu-Cohen to investigate the doping effect of vanadium impurity on structural, electronic and magnetic properties of In 1−x V x P and B 1−x V x P alloys at various concentrations x = 0.0625, 0.125 and 0.25. Owing to the metallic nature of majority spin and semiconducting minority spin, the In 1−x V x P compounds exhibit a halfmetallic character with total magnetic moments of 2 μ B , while the B 1−x V x P has metallic nature for all concentrations. The results of exchange parameters revealed that exchange coupling between vanadium atoms and the conduction band is ferromagnetic, confirming the magnetic feature of In 1−x V x P and B 1−x V x P. From our findings, we have predicted that the In 1−x V x P alloys seem to be potential materials for spintronics.

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“…Recently, extensively studies have been investigated to control the properties of (DMS)s as Ti-doped AlP [5], Ca doped AlP [6], Cr doped AlP [7], Ga 1−x Mn x N and Ga 1−x Mn x As [8], p-type (Ga, Fe)N [9], V doped AlN [10], Cr-doped GaP [11], V-doped GaN [12], V-doped GaN [13], Mn-doped III-V [14], doped GaAs (Zinc Blende) [15], Ga 1-x Mn x P and Ga 1-x Mn x As [16], V-doped GaN [17], Cr-doped AlP [18], Cu -doped ZnO [19].…”

Section: Introductionmentioning

confidence: 99%