Diffusion of Tin in Gallium Arsenide

Goldstein, B.; Keller, Helmut

doi:10.1063/1.1736193

Cited by 27 publications

(11 citation statements)

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“…Only Goldstein and Keller (1961) gave values of DO and Q. These were, respectively, 6 x 10-4 cm2 s-1 and 2.5 eV.…”

Section: Discussionmentioning

confidence: 91%

“…There is very little information available on the diffusion of tin in GaAs. Early work by Goldstein and Keller (1961) and by Fane and Goss (1963) established that tin diffusion in GaAs is a very slow process compared to acceptor diffusion in the same material. More recently it has been demonstrated that tin diffusions can be carried out from a doped film of Si02 deposited on the GaAs surface (Gibbon andKetchow 1971, Yamazaki et al 1975).…”

Section: Introductionmentioning

confidence: 99%

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Diffusion of tin in n-type GaAs

Tuck

Badawi

1978

J. Phys. D: Appl. Phys.

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A series of experiments is described in which radioactive tin was diffused into GaAs for a wide range of conditions. Radio-tracer profiles were plotted and diffusion coefficients were calculated. It was found that at the lowest temperatures used ( approximately 850 degrees C), the measured diffusion coefficients depended on the doping of the original GaAs slice used in the experiment. At higher temperatures ( approximately 1100 degrees C), however, the diffusion coefficient was independent of the substrate material. Electrical measurements were also carried out on the diffused specimens so that direct comparison could be made between tin concentration and free carrier density. It was found that at high doping concentrations there were many more tin atoms than electrons in the samples. The results are interpreted in terms of a model in which the tin diffuses by way of charged gallium vacancies.

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“…Only Goldstein and Keller (1961) gave values of DO and Q. These were, respectively, 6 x 10-4 cm2 s-1 and 2.5 eV.…”

Section: Discussionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Diffusion of tin in n-type GaAs

Tuck

Badawi

1978

J. Phys. D: Appl. Phys.

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“…After diffusion, the junction depth was determined by angle lapping, delineating the junction using copper sulfate solution and measurement using interferometric techniques. (10). 2 for various oxide thicknesses.…”

Section: Parallel Plane Diffusionsmentioning

confidence: 99%

Planar Diffusion in Gallium Arsenide from Tin‐Doped Oxides

Baliga

Ghandhi

1979

J. Electrochem. Soc.

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A new technique for the fabrication of planar junctions in gallium arsenide, by diffusion from tin-doped silicon dioxide layers, has been investigated. It has been found that the doped oxide should contain less than 10% by weight of tin to prevent the occurrence of molten phases at the diffusion temperature (...I010~ Under these conditions, the junction depth increases as the square root of diffusion time for thick oxides and short diffusion times. However, the junction depth can also decrease with increasing diffusion time due to dopant depletion in the oxide if the oxide is thin and the diffusion time is large. Planar diffusions from tin-doped oxides have been performed in evacuated quartz ampuls, with no arsenic overpressure, using phosphosilicate glass films as diffusion masks. Lateral diffusions of less than twice the junction depth have been achieved by using masks with 15% by weight of P205. These diffusions have been performed under conditions that appear to be more severe than those expected during open-tube diffusion. Thus, the results indicate that the doped oxide diffusion technique should be suitable for the development of an open-tube planar diffusion process for the fabrication of gallium arsenide devices and integrated circuits. Semiconductor Grade, Matheson Gas Products, East Rutherford, Massachusetts. 135 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-03-23 to IP ABSTRACTThe influence of meltback on dopant distribution in silicon liquid phase epitaxial layers has been examined for heavily boron-doped substrates. Meltback has been shown to produce a graded p-type layer at the interface between the layer and the substrate. An analysis is presented to demonstrate that this layer has an exponentially graded profile and several experiments are described which demonstrate that the boron is uniformly distributed in the melt during epitaxial growth. In addition, growth conditions are described to prevent the formation of this p-type layer and to achieve an abrupt interface between the epitaxial layer and the substrate.In previous papers it has been demonstrated that epitaxial layers of silicon can be grown by liquid phase 9 ~-lectrochemical Society Active Member. epitaxy by using tin as a solvent for silicon (1-3). In these papers, the kinetics of the epitaxial growth process and the morphology of the resulting layers were ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-03-23 to IP

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“…~The maximum electron concentration of ~2.6 • 10 TM cm -~ was obtained near x ----6O0A; the concentration is somewhat lower than the solubility limit of Te in GaAs (10, 11) (Cs ----5-8 • 10 is cm-3). Table I shows the influence of diffusion effects upon the distribution of implanted impurities for various dopants of Group II, IV, and VI elements (9,(12)(13)(14)(15). Here, Rp is the projected range, ARp is the mean range straggling, D is the diffusion coefficient of an impurity at T ~-900~ and t is the diffusion time of 600 sec.…”

Section: Resultsmentioning

confidence: 99%