Sheet-resistivity and Hall-effect measurements were made on C-ion-implanted GaAs after annealings at 600, 700, 800, or 900 °C. A doping efficiency of up to 50% was obtained in the 900 °C-annealed sample which is much higher than the 2–8% reported previously. The electrical profile of this sample indicated that most of the implanted C became substitutional. The electrical compensation level, on the other hand, remained relatively high (0.3–0.6) throughout the profiling range and is responsible for the low doping efficiency obtained in the C-implanted p-type GaAs.
Dual implants of C+ and Ga+ ions in GaAs have been investigated by sheet-resistivity and Hall-effect measurements. Efficient doping has been achieved by dual implantation, even at an annealing temperature of 700 °C. Analysis of electrical profiles indicates that the concentration of substitutional atoms in As sites is less than the implanted dose; the remaining C atoms are believed to out-diffuse through encapsulation during annealing. Although the doping efficiency for the dual implants is higher than that of the single implants, the effective compensation ratio is about the same, which suggests that ’’self-compensation’’ may be the predominant mechanism in the implanted samples.
Aluminum was implanted in ZnSe at 90 keV to a dose of 1015 ions/cm2 at room temperature. Hall-effect and sheet-resistivity measurements were made on the samples for various annealing conditions. The implanted layer is found to be degenerate n-type having a sheet resistivity of ∼103 Ω/□, after annealing at 900°C for 4 h.
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