Diffusion of phosphorus in CdTe

Hoonnivathana, Ekachai; Jones, E. D.; Viney, I.V.F.; Duckers, Les

doi:10.1007/s11664-998-0024-4

Cited by 7 publications

(3 citation statements)

References 12 publications

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“…Bulk dislocation density is estimated to be less than 10 5 cm -2 by Nippon. Consequently, it is unlikely that the sX P concentration beyond 500 nm can be described by the dislocation diffusion speculated in previous work [18,35]. It is more likely that there is a second bulk diffusion mechanism as mentioned above.…”

Section: Resultsmentioning

confidence: 79%

“…1c, the presence of non-zero concentrations of P in the center of these grains suggests that there is another diffusion mechanism facilitating P diffusion in CdTe. Interestingly, earlier experiments on single crystals revealed a fast diffusion component but it was not given much attention [17,18]. Hoonnivathana, et al suggested that it may be related to GBs or dislocations.…”

Section: Resultsmentioning

confidence: 99%

“…Yet, despite their importance, there have been limited diffusion kinetic studies for Group V elements in CdTe. Hall and Woodberry published some P diffusion and incorporation data in the 1960s [17], followed more recently by Hoonnivathana et al [18]. Based on the diffusion coefficients they reported for single crystals, it would appear that bulk P diffusion is too slow to achieve meaningful incorporation at temperatures viable for production.…”

Section: Introductionmentioning

confidence: 99%

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Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

Colegrove¹,

Harvey²,

Yang³

et al. 2016

Phys. Rev. Applied

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A key challenge in cadmium telluride (CdTe) semiconductors is obtaining stable and high hole density. Group I elements substituting Cd can form acceptors but easily self-compensate and diffuse quickly. For example, CdTe photovoltaics have relied on copper as a dopant, but this creates stability problems and hole density that has not exceeded 10 15 cm-3. If hole density can be increased beyond 10 16 cm-3 , CdTe solar technology can exceed multicrystalline silicon performance and provide levelized costs of electricity below conventional energy sources. Group V elements substituting Te offer a solution, but they are very difficult to incorporate. Using time-of-flight secondary-ion mass spectrometry, we examine bulk and grain boundary (GB) diffusion of phosphorous (P) in CdTe in Cd-rich conditions. We find that in addition to slow bulk diffusion and fast GB diffusion, there is a critical fast bulk diffusion component that enables deep P incorporation in CdTe. Detailed first-principles calculations indicate the slow bulk diffusion component is caused by substitutional P diffusion through the Te sublattice, whereas the fast bulk diffusion component is caused by P diffusing through interstitial lattice sites following the combination of a kick-out step and two rotation steps. The latter is limited in magnitude by high formation energy, but is sufficient to manipulate P incorporation. In addition to an increased physical understanding, this result opens up new experimental possibilities for Group V doping in CdTe applications.

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Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

Colegrove¹,

Harvey²,

Yang³

et al. 2016

Phys. Rev. Applied

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Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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Understanding of self-and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius' parameters (D=D 0 exp(2DE a /kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D 0 , and the activation energy, DE a , of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. Reasons of the lack of correspondence of the data to compensative dependence are discussed.

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Doping

Panchuk

Fochuk

2010

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Diffusion of phosphorus in CdTe

Cited by 7 publications

References 12 publications

Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

Phosphorus Diffusion Mechanisms and Deep Incorporation in Polycrystalline and Single-Crystalline CdTe

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Doping

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