Doping

Panchuk, O.; Fochuk, P.

doi:10.1016/b978-0-08-046409-1.00006-x

Cited by 6 publications

(4 citation statements)

References 148 publications

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“…The Fe 2+/3+ (Fe Cd ) donor level was found to be located at E C -1.40-eV and the other donor (Fe i ) level at E V + 0.35 eV [8]. According to previous results, Fe diffusion occurs via Fe interstitials (Fe i ) instead of Cd vacancies [6]. Additionally, Fe solubility studies exhibited a clear dependence on the stoichiometry of CZT [6].…”

Section: Resultsmentioning

confidence: 61%

“…According to previous results, Fe diffusion occurs via Fe interstitials (Fe i ) instead of Cd vacancies [6]. Additionally, Fe solubility studies exhibited a clear dependence on the stoichiometry of CZT [6]. Therefore, both Fe Cd and Fe i point defects might be present in a hightemperature-grown CdTe and CZT.…”

Section: Resultsmentioning

confidence: 64%

“…Especially, the middle portion contained less Ga, Cu, and Fe than the first-to-freeze and the last-to-freeze sections. Among those impurities, Ga and Na have been known to be a shallow donor (E C -0.013 eV) [5] and a shallow acceptor (E V + 0.058 eV), respectively [6], whereas Cu [7] and Fe [8,9] are known as a deep acceptor and a deep donor, correspondingly. However, there is still controversy regarding the exact trap levels of the Cu and Fe impurities.…”

Section: Resultsmentioning

confidence: 99%

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Purification of CdZnTe by electromigration

Kim

Hong

et al. 2015

Journal of Applied Physics

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Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10−2 cm2/V, compared with that of 1.4 × 10−3 cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

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Section: Resultsmentioning

confidence: 61%

Section: Resultsmentioning

confidence: 64%

Section: Resultsmentioning

confidence: 99%

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Purification of CdZnTe by electromigration

Kim

Hong

et al. 2015

Journal of Applied Physics

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“…This can be explained by the fact that the Mn content in the middle part of the ingot is slightly lower than at the beginning and at the top of the crystal. It is known [12,13] that the segregation coefficient of Mn in CdTe crystals is equal to near unity, while the keff (Zn) value in Cd0.98Zn0.02Te is estimated to be 1.16 and even as high as 1.3 [14]. Obviously, the small addition of Zn slightly influenced the quarternary crystal lattice parameters along the crystal axis resulting in Zn-content and Mn-content inhomogeneities.…”

Section: Crystal Structurementioning

confidence: 99%

Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

Kopach

et al. 2017

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Solid-liquid phase transitions in Cd0.95-xMnxZn0.05Te alloys with x = 0.20 and 0.30 were investigated by differential thermal analysis (DTA). The heating/cooling rates were 5 and 10 K/min with a melt dwell time of 10, 30 and 60 minutes. Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots were grown by the vertical Bridgman method guided by the DTA results.Te inclusions (1-20 micron diameter), typical of melt-grown CdTe and Cd(Zn)Te crystals, were observed in the ingots by infrared transmission microscopy. The measured X-ray diffraction patterns showed that all compositions are found to be in a single phase. Using current-voltage (I-V) measurements, the resistivity of the samples from each ingot was estimated to be about 10 5 Ohm•cm. The optical transmission analysis demonstrated that the band-gap of the investigated ingots increased from 1.77 to 1.88 eV with an increase of the MnTe content from 20 to 30 mol. %.

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