Diffusion of Boron near Projected Ranges of B and BF₂ Ions Implanted in Silicon

Abstract

Site-controlled InAs quantum wires were fabricated on cleaved edges of AlGaAs/GaAs superlattices (SLs) by solid source molecular beam epitaxy. The cleaved edge of AlGaAs/GaAs SLs acted as a nanopattern for selective overgrowth after selective etching. By just growing 2.0 ML InAs without high temperature degassing, site-controlled InAs quantum wires were fabricated on the cleaved edge. Furthermore, atomic force microscopy demonstrates the diffusion of In atoms is strong toward the [001] direction on the (110) surface.

Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

“…[4] Recently an interdigitated back contact cell was introduced using c-Si/SiO 2 /poly-Si passivated contacts formed by ion implantation [5][6][7][8][9] with a record 23.9% efficiency achieved by Rienäcker et al [10] In this cell configuration, the ions are implanted into a-Si or polycrystalline-Si (pc-Si) layers separated from the c-Si wafer by a thin oxide layer, instead of directly into the c-Si wafer. This eliminates the end-of-range damage such as dislocation loops [11] to the wafer, which in turn, lowers the post implantation thermal budget needed to activate and diffuse dopants in the pc-Si layer, rather than anneal out induced defects in the c-Si. These contacts have excellent passivation, J o < 10 fA/cm 2 , in both the p-type emitter and the n-type contact regions, and low enough specific contact resistivities to not limit the device.…”

Solar‐grade boron emitters by BF3 plasma doping and role of the co‐implanted fluorine

“…Indeed, it is known that BF 2 + constitutes the majority of implanted specie through the PIII technique . Such ions amorphize the silicon surface and may induce end‐of‐range (EOR) damage such as dislocation loops (DLs) at the initial amorphous/crystalline interface after thermal annealing . Fluorine bubbles may also be trapped in some cases .…”