A comprehensive model for the diffusion of boron in silicon in presence of fluorine

Wolf, F. Alexander; Martinez-Limia, Alberto; Pichler, P.

doi:10.1016/j.sse.2013.04.027

Cited by 3 publications

References 52 publications

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Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

Kiga

Uematsu

Itoh

2020

Journal of Applied Physics

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The effect of fluorine (F) on diffusion of boron (B) in silicon (Si) is investigated by secondary ion mass spectrometry of Si, B, and F diffusion using pre-amorphized natSi/28Si isotope multilayers that are co-implanted with B and F. By the presence of F, diffusion of B is suppressed while that of Si is enhanced. A quantitative analysis of the experimental results based on our diffusion model shows that the suppression of B diffusion is due to (1) Si interstitial undersaturation caused by the time-dependent formation and dissolution of F-vacancy (FV) clusters and (2) direct interaction between B and FV clusters. The model developed in this study enables an accurate simulation of B and Si diffusion in the presence of F in Si.

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Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

Kiga

Uematsu

Itoh

2020

Journal of Applied Physics

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Continuum modeling of implantation and thermal processes for advanced devices formation

Zographos

Tsibizov

Zechner

2014

2014 20th International Conference on Ion Implantation Technology (IIT)

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Technology Computer-Aided Design is widely used for the development and optimization of advanced device formation. Ion implantation and thermal annealing are the main focus of dopant profile simulation for process technologies. In this paper, we review the current continuum modeling capabilities and calibration for ion implantation and thermal processes, including Monte Carlo ion implantation, coimplantation, amorphization, recrystallization, damage evolution, and dopant diffusion and activation. In addition, modeling of alternative doping techniques such as thermal implantation, plasma doping, and melt laser annealing will be addressed. Continuum front-end process simulation of Si-based devices including advanced CMOS, memory, power, and optoelectronic devices is considered to be mature. With the introduction of new channel materials, the models and calibration of alternative materials such as SiGe, Ge, and III-V are also required and their current status is discussed.

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Diffusion and Segregation Model for the Annealing of Silicon Solar Cells Implanted With Phosphorus

Wolf

Martinez-Limia

Grote³

et al. 2015

IEEE J. Photovoltaics

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We present a fully calibrated model for the diffusion, segregation, and activation of phosphorus for typical annealing conditions of implanted silicon solar cells. In contrast to existing process simulation software, this model allows the quantitative prediction of doping profile distributions, and, thereby, sheet resistances, surface concentrations, and junction depths. The model also provides an intuitive understanding of the dependence of these quantities on the parameters of the annealing process.

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A comprehensive model for the diffusion of boron in silicon in presence of fluorine

Cited by 3 publications

References 52 publications

Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon

Continuum modeling of implantation and thermal processes for advanced devices formation

Diffusion and Segregation Model for the Annealing of Silicon Solar Cells Implanted With Phosphorus

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