Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Page, Matthew; Theingi, San; Aguiar, J. Albino; Lee, Benjamin G.; Stradins, Paul

doi:10.1016/j.solmat.2016.05.044

Cited by 37 publications

(20 citation statements)

References 23 publications

(34 reference statements)

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“…B2H6 or PH3) [8,[11][12][13] or ex-situ (e.g. by diffusion [5,7] or ion implantation [15,16]). An additional hydrogenation process is generally performed to further enhance the surface passivation properties [11,12,17].…”

Section: Introductionmentioning

confidence: 99%

Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

Morisset

Cabal

Grange

et al. 2019

Solar Energy Materials and Solar Cells

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• Blister-free boron-doped poly-Si layers are obtained by PECVD through optimization of the deposition temperature and gas ratio. • The process developed is approaching the industrial standards (large area KOH-polished wafers, SiOx growth included in standard RCA cleaning, semi-industrial PECVD tool). • High and homogeneous surface passivation properties are obtained (iVoc = 734 mV and J0 = 7 fA•cm-2). • Conductive spots detected by C-AFM are not mirroring pinholes within the interfacial SiOx layer.

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Section: Introductionmentioning

confidence: 99%

Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

Morisset

Cabal

Grange

et al. 2019

Solar Energy Materials and Solar Cells

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“…[17,22] The hydrogen-rich capping layer could also improve the electrical properties by incorporation of hydrogen atoms as shallow donors into the ZnO:Al layer. [23,24] In addition, hydrogen has a beneficial effect on the passivation quality of POLO junctions. [10,25] The PDA is performed either on a hot plate for 3 min at 400 °C or 600 °C, or for a few seconds in a conveyor belt furnace with set peak temperature of 600 °C.…”

Section: Methodsmentioning

confidence: 99%

High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability

Wietler

Min

Reiter

et al. 2019

IEEE J. Photovoltaics

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We investigate the enhancement in transparency and conductivity of aluminum doped zinc oxide (ZnO:Al) layers upon high-temperature annealing and its impact on contact resistance as well as on passivation properties of carrier selective junctions based on doped polycrystalline Si on a passivating silicon oxide (POLO). The temperature stability of these junctions allows annealing of the ZnO:Al/POLO combination up to 600 °C. We prepare ZnO:Al films by DC magnetron sputtering at room temperature. We determine complex refractive index of ZnO:Al in dependence of post-deposition annealing (PDA) temperature by spectroscopic ellipsometry. High-temperature annealing improves the conductivity and reduces the absorption within ZnO:Al. The optical losses in a ZnO:Al/POLO stack are rather limited by the poly-Si layer than by the ZnO:Al. The sheet resistance improves from roughly 20000 /sq for 80 nm thick as-deposited ZnO:Al films to 72 /sq after fast firing at 600 °C. At the same time PDA cures the damage induced in the POLO junctions during ZnO:Al deposition. After PDA with AlxOy capping layers, the passivation quality even surpasses the initial level. A transmsission electron microscopy analysis of the interface between the ZnO:Al and the underlying poly-Si reveals the formation of a silicon oxide like interfacial layer after PDA at 400 °C. This interfacial layer causes Manuscript a high contact resistivity of the metal/ZnO:Al/POLO-junction and could limit the thermal budget for cell processing. Our results indicate that after successful process adjustment, ZnO:Al could substitute In-based transparent conductive oxides on POLO cells for cost reasons and also enable a high efficiency potential.

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“…Though modern MOS device technology may rely on ion-implantation free approaches [26,27], applications of ion implantation are expanding over areas of quantum information processing [28,29] and photovoltaics [30,31]. Plasma immersion ion implantation enables fabrication of 3D transistor architectures [32,33] required for scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) and is technologically more convenient for the fabrication of shallow pn-junctions.…”

Section: à3mentioning

confidence: 99%

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

Fedorenko¹

2017

Ion Implantation - Research and Application

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Ion implantation is a nonequilibrium doping technique, which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Due to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology, ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nms to several microns in depth range). Ion implantation introduces point defects in solids. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.

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Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Cited by 37 publications

References 23 publications

Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

Highly passivating and blister-free hole selective poly-silicon based contact for large area crystalline silicon solar cells

High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

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