Diffusion-limited growth of oxide precipitates in czochralski silison

Wada, K.; Inoue, Naohisa; Köhra, Kazutake

doi:10.1016/0022-0248(80)90304-8

Cited by 110 publications

(35 citation statements)

References 5 publications

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“…If the radius of a cluster is smaller than r*, it will tend to shrink, because the free energy change for nucleation is positive in this case. The value r* can be determined by the equation (Verhoeven, 1975 (Wada, 1980) indicated that the majority of precipitates may be platelets. The results from our TEN!…”

Section: Critical Nucleus Radiusmentioning

confidence: 99%

Denuded Zones in Czochralski Silicon Wafers

Wang

Chang

Demer

et al. 1984

J. Electrochem. Soc.

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Denuded zones in the near‐surface regions of Czochralski silicon wafers were investigated by means of both optical microscopy (OPM) and transmission electron microscopy (TEM). The results of this investigation show that the (nearly defect‐free) denuded zones formed near the wafer surface depend strongly on the initial oxygen concentration and the thermal history of the wafers, e. g., wafer annealing‐temperature sequence, gas ambient, and annealing duration. Clear denuded zones were observed in wafers annealed under conditions in which the oxygen out‐diffusion process is enhanced,e. g., in a high‐low, two‐step anneal (1050°C for 16h and 800°C for 16h), in a nonoxidizing ambient. A high initial oxygen concentration false(1.5×1018

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Section: Critical Nucleus Radiusmentioning

confidence: 99%

Denuded Zones in Czochralski Silicon Wafers

Wang

Chang

Demer

et al. 1984

J. Electrochem. Soc.

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“…Thus, the ratio of the masses m plat /m sph could be taken approximately equal to the ratio of the volumes V plat /V sph . These volumes have been measured by transmission electron microscopy (TEM) [83][84][85] and calculated by using Ham's theory [86]. The corresponding values are V sph ≈ 10 nm 3 and V plat ≈ 100 nm 3 respectively, from which we receive V sph /V plat ≈ 0.1.…”

Section: Resultsmentioning

confidence: 99%

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Sgourou

Angeletos

Chroneos

et al. 2017

J Mater Sci: Mater Electron

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“…The annealing temperature was set between 700 and 1100°C to modify the density of precipitates, 11 and the annealing time was altered from 16 to 128 h to modify the size of precipitates. 12 Two step annealing was also performed to introduce precipitates of various size but the same density, about 1ϫ10 8 /cm 3 , which is high enough for TEM observation. The first annealing step is at 900°C for 1 h, and the second step is at 1000 or 1100°C for various time ranging from 4 to 16 h.…”

Section: Methodsmentioning

confidence: 99%

A new data processing method to determine accurate density and size distribution of defects by bright field infrared laser interferometer (optical precipitate profiler)

Nakai

Matsumura

Harada

1998

Review of Scientific Instruments

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We have addressed essential problems for the determination of the size distribution and volume density of crystal defects by bright field infrared laser interferometer [optical precipitate profiler (OPP)]. By taking into consideration the influences of the intensity profile and phase shift of the incident laser beam along the optical axis, we developed a new statistical data processing method to determine the true size distribution and volume density of the crystal defects from the raw OPP data. Using this method we evaluated the size distribution and volume density of oxygen precipitates introduced in a CZ–Si wafer and the validity of the new method was confirmed by comparing the obtained results with those obtained by the etching method and transmission electron microscopy.

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Diffusion-limited growth of oxide precipitates in czochralski silison

Cited by 110 publications

References 5 publications

Denuded Zones in Czochralski Silicon Wafers

Denuded Zones in Czochralski Silicon Wafers

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

A new data processing method to determine accurate density and size distribution of defects by bright field infrared laser interferometer (optical precipitate profiler)

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