Oxygen precipitate behavior of nitrogen-doped Czochralski-grown silicon (CZ-Si) crystals is investigated. It is found that nitrogen doping enhances oxygen precipitation after heat treatment. The oxygen precipitate volume density in nitrogen-doped crystals after heat treatment does not change regardless of the heat treatment temperature, while the oxygen precipitate volume density of crystals which are not nitrogen doped decreases as the heat-treatment temperature increases. The characteristics of precipitation behavior in nitrogen-doped CZ-Si crystals are due to the “grown-in” oxygen precipitates, which already exist in an as-grown state with a high volume density. The oxygen precipitation growth of nitrogen-doped crystals is found to be an oxygen diffusion limited process, the same as in the case of the oxygen precipitation growth of crystals which are not nitrogen doped. The formation mechanism of grown-in oxygen precipitates will also be discussed in this article.
The ordinary Hall effect (OHE), which is caused by an external magnetic field, was studied as a mechanism for the generation of spin current. It has been theoretically elucidated that, under an open-circuit condition, the OHE can contribute to spin-current generation when spin-polarized electrons and holes are simultaneously present as mobile carriers. This OHE contribution to spin current generation is caused by the steady-state kinematics of electrons and holes whose transverse velocities have the same direction. Although anomalous Hall effects may contribute to spincurrent generation, the OHE plays a principal role in the generation of spin current when electrons and holes have approximately the same transport characteristics. The experimental aspects of possible materials for the isomorphic electron and hole systems are argued on the basis of the experimental results of the magnetotransport measurement of yttrium dihydride and preliminary results of the magnetization measurement of hydrogenated films of gadolinium. #
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