Defect Control in Nitrogen Doped Czochralski Silicon Crystals

Ikari, Atsushi; Nakai, Katsuhiko; Tachikawa, Yuya; Deai, H.; Yamaguchi, Hideki; Ohta, Yasumitsu; Masahashi, Naoya; Hayashi, Shinji; Hoshino, T.; Ohashi, Wakana

doi:10.4028/www.scientific.net/ssp.69-70.161

Cited by 30 publications

(14 citation statements)

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“…10,11 Precipitates grown at high temperature are suggested to be N 2 V 2 O x and those grown at around 750°C to be N m O n . 6(b) and 6(c), follows the same trend as the OPP profile, then slowly decays starting from the lower edge of the LDZ.…”

Section: A Defect Nucleation Mechanisms In N-cz Simentioning

confidence: 99%

“…The dominant defect size in Hi-Lo-Hi cycled N-free sample 2H8 is 25 nm, and reaches 40 nm if no dissolution step is applied, see 2L8 defect profile in Fig. [9][10][11]27 It is remarkable that the bulk N and O SIMS profiles of 3L64 (i.e., Lo step for 64 h) have smaller oscillations than 3L8. 2(a).…”

Section: Oxygen Precipitates In Region III (Bulk Underneath Ldz)mentioning

confidence: 99%

“…4,5 Therefore, N doping option is suitable for next generation large wafers. [9][10][11] At concentrations in the order of 10 15 cm −3 or less, nitrogen efficiently reduces microdefects such as A defects, D defect, [12][13][14][15][16] and enhances oxygen precipitation 10,[17][18][19] by increasing the precipitate concentration while reducing their size. 7 Prior work of Sun and co-workers 8 reported that N cancels the C effects during internal gettering cycling.…”

Section: Introductionmentioning

confidence: 99%

“…However, they also found that N degrades the denuded zone (DZ). 9,11,16 In order to comprehend and model oxygen precipitation mechanisms in N-doped Si, the kinetics of point defect reac-tions during crystal growth and during subsequent wafer annealing need to be thoroughly clarified. [9][10][11] At concentrations in the order of 10 15 cm −3 or less, nitrogen efficiently reduces microdefects such as A defects, D defect, [12][13][14][15][16] and enhances oxygen precipitation 10,[17][18][19] by increasing the precipitate concentration while reducing their size.…”

Section: Introductionmentioning

confidence: 99%

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Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

Karoui

Rozgonyi

et al. 2004

Journal of Applied Physics

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Defect size distributions in nitrogen-doped Czochralski (N-CZ) silicon wafers were obtained using an oxygen precipitate profiler and Wright-Jenkins etching. These showed unique depth dependence in low-high and high-low-high cycled N-CZ wafers. Unique phenomena observed include a high defect concentration at the subsurface that decreases within the top 2 m of the so-called denuded zone. In contrast to N-free CZ Si for which the first high step annealing dissolves the grown-in defects, these appeared to be stable in N-CZ Si. As a result, the defect size distribution in the bulk was found to be independent of the annealing cycle. It was also found that the depth dependent defect concentration correlates well with oxygen and strongly with nitrogen secondary ion mass spectroscopy profiles, suggesting that nitrogen is the leading impurity in the defect formation processes even though introduced at very low concentration. Nitrogen appeared to effectively modify the nucleation regime by a drastic increase of the nuclei density. At low temperature under external stress, nitrogen and oxygen cosegregate to the surface where the stress is applied; such a phenomenon is largely increased at high temperature.

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Section: A Defect Nucleation Mechanisms In N-cz Simentioning

confidence: 99%

Section: Oxygen Precipitates In Region III (Bulk Underneath Ldz)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Oxygen precipitation in nitrogen doped Czochralski silicon wafers. I. Formation mechanisms of near-surface and bulk defects

Karoui

Rozgonyi

et al. 2004

Journal of Applied Physics

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“…Unpaired electrons, i.e., dangling bonds, due to impurities in Si substrates have already been studied by many researchers. E ' and Pb defects due to surface oxidation of Si have already been confirmed [41][42][43][44][45][46][47][48][49][50][51][52]. Also, a theoretical research reports that ferromagnetism of the Si material is generated by interaction between dangling bonds that become unpaired electrons [35].…”

Section: Introductionmentioning

confidence: 99%

Appearance of Ferromagnetic Property for Si Nanopolycrystalline Body and Vanishing of Electrical Resistances at Local High Frequencies

Saiki

Iida

Inada

2018

Journal of Nanomaterials

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Reduction in the skin effect for the sintered Si nanopolycrystalline body as an electricity conductor at a high frequency due to its nano-structure was studied. Singular vanishing of electrical resistances near a local high magnetic harmonic frequency of a few MHz was observed. This phenomenon has not been observed for conventional ferromagnetic metals. The measured electrical resistances changed to almost 0 mΩ at room temperature. At the same time, negative resistance of the sintered Si nano-polycrystalline body was observed. It will be applicable to electronic transmittance lines or semiconductors. Numerical calculation was also performed on the electrical resistance with frequency dependency while considering the electric field and magnetic field in the sintered Si nanopolycrystalline body. The experimental and calculated results are compared.The calculation could explain the variation of the relative permittivity of the Si nanopolycrystalline and the phenomenon for vanishing the resistivity at frequency of MHz theoretically.Reduced Si nanoparticles from SiO2 powder were synthesized by laser ablation in liquid. A Si nano-polycrystalline body made of the reduced Si nanoparticles was fabricated. It was found by measuring the magnetization property of the body that the sintered Si nano-polycrystalline body has ferromagnetism. Dangling bonds (unpaired electrons) have long been known to occur due to defects in Si crystals. Perfect Si without defective crystals has no dangling bonds. However, Si nanoparticles have many dangling bonds. High-density dangling bonds cause the sintered Si nanopolycrystalline to have ferromagnetism. In this study, the density of the unpaired electrons in the sintered Si nanopolycrystalline was observed using ESR. It has been clarified that the Si nanopowder and the sintered Si nanopolycrystalline have numerous dangling bonds. Both densities of the dangling bonds were evaluated.

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