Diffusion lengths of silicon solar cells from luminescence images

Würfel, P.; Trupke, Thorsten; Puzzer, T.; Schäffer, Eike; Warta, Wilhelm; Glunz, Stefan W.

doi:10.1063/1.2749201

Cited by 294 publications

(154 citation statements)

References 11 publications

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“…Numerous qualitative and quantitative methods based on PL and electroluminescence (EL) imaging have recently been developed for solar cell applications. 32 These luminescence imaging-based, noncontact electrical characterization techniques are widely adapted in characterizing Si bricks for solar cell applications prior to wafer slicing. They are based on photoconductance measurement principles and spatially resolved data (maps), typically generated by raster scanning of the Si brick surface.…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Yoo¹,

Kang²,

Murai

et al. 2015

ECS J. Solid State Sci. Technol.

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Photoluminescence (PL) spectra from lightly boron (B) doped p − -Si(100) under 488.0 nm Ar + ion laser excitation over the temperature range of 22 K-290 K is presented. Change of PL peak height (maximum intensity), peak position, peak area (areal intensity), full-width-at-half-maximum (FWHM: peak width) were determined as a function of temperature. PL intensity was sharply decreased with temperature increase in the temperature range of 22 K -170 K and then slowly increased again in the temperature range of 170 K-290 K. Phonon replicas of a relatively sharp band-to-band (or band edge (BE)) PL peak were clearly measured at low temperatures (≤90 K). PL spectra became broader and the phonon replicas were barely distinguishable as the temperature was increased. The envelope of the main PL peak and the broadening of peak width with the Si temperature were qualitatively in good agreement with the Maxell-Boltzmann probability distribution function. The direction of peak position shift with Si temperature change was also in good agreement with the temperature dependence of the Si bandgap. All measured PL spectra were curve fitted using combinations of modified Gaussian function(s) and standard Gaussian function(s). A simplified curve fitting method for broad PL spectra, consisting of the BE peak and band tail peak, using an exponentially modified Gaussian (EMG or ExGaussian) function and a number of standard Gaussian functions, was proposed from a practical usage point of view. Radiative recombination processes in Si and potential industrial applications of the PL characterization technique were discussed. For the characterization of electrical behaviors of Si, resistivity, carrier concentration, mobility and Hall effect measurements were routinely inspected during wafer fabrication and incoming quality control at the wafer fabs.1 A number of noncontact characterization techniques, such as microwave detected photoconductance decay (μ-PCD)1,2 and inductively coupled quasi-steady-state photoconductance (QSSPC), 1,3 have been used for in-line monitoring of contamination and process induced modulation of electrical behaviors of Si. Steady state PCD measurement techniques 4 enabled by improved laser technology were recently introduced.With the introduction of photoluminescence (PL) imaging and spectrum analysis, a noncontact, purely optical technique is now available for spatially resolved electrical characterization. For industrial applications, the ease of measurement without special sample preparation is important. This is especially true for in-line monitoring applications in semiconductor device manufacturers. PL measurements at room temperature (RT) are preferred. However, the RTPL spectra from Si are generally very broad and it is difficult to identify the origin of variations in RTPL spectra. In this paper, temperature dependence of PL spectra from lightly boron (B) doped p − -Si(100) was measured in the temperature range of 22 K-290 K and the effect of temperature on the change of PL spectra was investigated. Practic...

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Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Yoo¹,

Kang²,

Murai

et al. 2015

ECS J. Solid State Sci. Technol.

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“…Then the spectral shape is also an image of these profiles and may be used for further analysis and evaluation [22].…”

Section: Discussionmentioning

confidence: 99%

Kirchhoff's generalised law applied to amorphous silicon/crystalline silicon heterostructures

Brüggemann

2009

Philosophical Magazine

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“…13 was applied. The generation rate (δg sp ) of photons per volume and energy interval in a semiconductor is given by the generalized Planck law: [17][18][19] δg sp = (8π n 2 /h 3 co 2 )(hν) 2 α BB e (−hν/kT) e (∆EF/kT) δ(hν)…”

confidence: 99%

Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

2016

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The room temperature photoluminescence (PL) spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.

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Diffusion lengths of silicon solar cells from luminescence images

Cited by 294 publications

References 11 publications

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Kirchhoff's generalised law applied to amorphous silicon/crystalline silicon heterostructures

Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

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