Diffusion-induced doping effects of Ga in ZnO/Ga/ZnO and AZO/Ga/AZO multilayer thin films

Bhoomanee, Chawalit; Ruankham, Pipat; Choopun, Supab; Wongratanaphisan, Duangmanee

doi:10.1016/j.apsusc.2018.04.082

Cited by 23 publications

(5 citation statements)

References 31 publications

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“…On the other hand, the peak centered at ∼532 eV (O II ) is associated with the oxygen-deficient region, specifically V O within the ZnO lattice. 50,53,54 O I components in all films are more prominent than O II components. This observation implies that the most oxygen atoms primarily exist as lattice oxygen.…”

Section: Resultsmentioning

confidence: 87%

“…The prominent peak located at ∼530 eV can be attributed to the presence of O 2– ions bonded to Zn 2+ arrays in the hexagonal wurtzite structure of ZnO. On the other hand, the peak centered at ∼532 eV (O II ) is associated with the oxygen-deficient region, specifically V O within the ZnO lattice. ,, O I components in all films are more prominent than O II components. This observation implies that the most oxygen atoms primarily exist as lattice oxygen.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

LiuYang,

Wang,

et al. 2024

J. Phys. Chem. C

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Gallium-doped zinc oxide (GZO) thin films with (100) preferred orientation were prepared on SiO 2 /Si substrates by atomic layer deposition (ALD). Effects of argon annealing temperature on GZO thin films were systematically investigated by X-ray diffraction (XRD), scanning electron spectroscopy (SEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Hall-effect measurement. XRD analysis showed that as the annealing temperature increased from 450 to 850 °C, the crystallization performance was greatly enhanced with the crystallite size of the film increasing from 35 to 65 nm. PL results revealed that the emission of oxygen vacancies in the annealed films was gradually reduced except for the film annealed at 850 °C, which was consistent with the decrease in concentration of oxygen vacancies deduced from XPS measurement. In addition, the resistivity of the annealed GZO films exhibited a noticeable increase up to 3 orders of magnitude. Results demonstrate that the annealing treatment process can obtain high-quality GZO films. This work lays the foundation for practical applications of ALD-GZO films including but not limited to photoelectric, transparent electronic devices.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

LiuYang,

Wang,

et al. 2024

J. Phys. Chem. C

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“…In XPS depth-profile analysis, extension of the element signal profile to the neighboring layer is typically identified as evidence of element diffusion. 61,62 Notably, the XPS depthprofile analyses of all devices were analyzed using the same instrument and conditions. Under this circumstance, a significant difference in Sn signals is observed in the SiO 2 films.…”

Section: Resultsmentioning

confidence: 99%

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

et al. 2023

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“…However, further increasing the Ga content to 4.52 and 5.42 at% will reduce the carrier concentration (Figure 6) owing to the strong interstitial mechanism. The interstitial mechanism leads to fewer electrons released from Ga atoms; therefore, the carrier concentration decreases with increasing Ga content [16,41]. The carrier mobility of the MIPEMOCVD-grown GZO thin films is influenced by multiple scattering mechanisms, which can be combined as follows [47]:…”

Section: Resultsmentioning

confidence: 99%

“…Nevertheless, acceptor defects such as interstitial oxygen and Zn vacancies strongly compensate for the doping-induced free charge in Al-doped ZnO (AZO), leading to poor reliability [15]. GZO has attracted interest in TCO and optoelectronic applications because Ga atom has less reactivity with oxygen and is more moisture-resistant as compared with Al atom [16]. In a B-doped ZnO thin film, B acts as a substitute for the Zn site and forms a strong B-O bond, thereby suppressing oxygen vacancy formation and improving electrical performance.…”

Section: Introductionmentioning

confidence: 99%

Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide

et al. 2021

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We have used a modified-intake plasma-enhanced metal–organic chemical vapor deposition (MIPEMOCVD) system to fabricate gallium-doped zinc oxide (GZO) thin films with varied Ga content. The MIPEMOCVD system contains a modified intake system of a mixed tank and a spraying terminal to deliver the metal–organic (MO) precursors and a radio-frequency (RF) system parallel to the substrate normal, which can achieve a uniform distribution of organic precursors in the reaction chamber and reduce the bombardment damage. We examined the substitute and interstitial mechanisms of Ga atoms in zinc oxide (ZnO) matrix in MIPEMOCVD-grown GZO thin films through crystalline analyses and Hall measurements. The optimal Ga content of MIPEMOCVD-grown GZO thin film is 3.01 at%, which shows the highest conductivity and transmittance. Finally, the optimal MIPEMOCVD-grown GZO thin film was applied to n-ZnO/p-GaN LED as a window layer. As compared with the indium–tin–oxide (ITO) window layer, the n-ZnO/p-GaN LED with the MIPEMOCVD-grown GZO window layer of the rougher surface and higher transmittance at near UV range exhibits an enhanced light output power owing to the improved light extraction efficiency (LEE).

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Diffusion-induced doping effects of Ga in ZnO/Ga/ZnO and AZO/Ga/AZO multilayer thin films

Cited by 23 publications

References 31 publications

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer

Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide

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Diffusion-induced doping effects of Ga in ZnO/Ga/ZnO and AZO/Ga/AZO multilayer thin films

Cited by 23 publications

References 31 publications

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

Effect of Argon Annealing Treatment on Photoelectric Properties of GZO Films Deposited by Atomic Layer Deposition

Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnOxdopant layer

Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide

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Performance improvement of a sol–gel ZTO-based TFT due to an interfacial SnO_xdopant layer