Diffusion barrier study on TaSix and TaSixNy

Wang, Wenchun; Chang, Te‐Sheng; Huang, Fon-Shan; Chen, Jiann‐Ruey

doi:10.1016/0040-6090(93)90261-m

Thin Solid Films

1993

DOI: 10.1016/0040-6090(93)90261-m

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Diffusion barrier study on TaSix and TaSixNy

Wenchun Wang¹,

Te‐Sheng Chang²,

Fon-Shan Huang³

et al.

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Cited by 3 publications

(1 citation statement)

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“…Amorphous refractory ternary materials such as (Ti, Ta, W)-Si-N and W-B-N do not have fast diffusion paths, such as the grain boundary which is present in polycrystalline materials, and are promising candidates for these applications. [3][4][5] At the same time, novel deposition processes that produce highly conformal films are also in great demand for cases where the aspect ratio of contact, via, and trench increases. Although most of those ternary barrier films can be prepared by sputtering in order to characterize their properties, the poor step coverage of sputtering will almost certainly restrict their application in ultralarge scale integration (ULSI) metallization technology.…”

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confidence: 99%

The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films

Min

Park

Park³

et al. 2000

J. Electrochem. Soc.

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Titanium‐silicon‐nitride thin films were grown by metallorganic atomic layer deposition (MOALD) using tetrakis(dimethylamido)titanium (TDMAT), ammonia, and silane at 180°C. When the reactants are injected into the reactor in the sequence ofTDMAT pulse, SiH4 pulse, and NH3 pulse, the Si content in the Ti‐Si‐N films is saturated at 18 atom %. By changing the supplying sequence in the order of TDMAT, NH3 , and SiH4 , the Si content is increased to 21 atom %. The Si content in the films is almost insensitive to the SiH4 partial pressure over a wide range of 0.27 and 13.3 Pa, because it is self‐limited by the quantity of SiH4 molecules absorbed on the film surface. By utilizing these inherent characteristics of MOALD, digital control of Si content in Ti‐Si‐N thin film is possible by controlling the number of SiH4 pulses during film deposition. The MOALD Ti‐Si‐N films have almost 100% step coverage on a 0.3 μm diam hole with an aspect ratio of 10:1. MOALD is considered to be a promising deposition method for less than 10 nm thick Ti‐Si‐N films as a Cu diffusion barrier film. © 2000 The Electrochemical Society. All rights reserved.

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mentioning

confidence: 99%

The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films

Min

Park

Park³

et al. 2000

J. Electrochem. Soc.

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Thermal stability study of TiN/TiSi2 diffusion barrier between Cu and n+Si

Chang

Wang

et al. 1994

Journal of Applied Physics

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The failure mechanism of the TiN/TiSi2 bilayers as diffusion barriers between Cu and n+Si was investigated. The TiN/TiSi2 bilayers were formed by either annealing Ti (50 nm)/n+Si via various rapid thermal processes or reactively sputtering TiN (50 nm) on TiSi2. The degradation study of the Cu/TiN/TiSi2/n+Si contact system was undertaken by scanning electron microscopy, cross-section transmission electron microscopy (XTEM), secondary-ion-mass spectrometry (SIMS), and diode leakage current and contact resistance measurements. Leakage current measurements indicated no deterioration of n+-p diode junctions up to 475 °C for 30 min in a N2 ambient. For the sintering temperature at 500 °C, the leakage current increased abruptly and SIMS profiles revealed a large amount of Cu atoms diffusing into the junctions of n+-p diodes. XTEM showed that the small pyramidal-shaped Cu3Si crystallite (with a size 0.25 μm) precipitated in the n+Si substrate. The formation of Cu3Si increased the occupied volume, then generated the gap between TiSi2 and n+Si, and gradually increased the specific contact resistance. The diffusion resistance, depending on the thickness of TiN film, was also observed.

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PVD Ti-Si-N Films Process Development for Copper Interconnect Applications

et al. 1998

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A process has been developed for the deposition of amorphous Ti-Si-N films using reactive ion sputtering of a TiSi target. The Ti-Si-N films have been extensively characterized over a wide range of process parameters. Resistivities of the films less than 300 μΩ-cm have been achieved. Stress measurements on Ti-Si-N films indicate that the film stress changes from tensile to compressive as the nitrogen composition is increased. Near-zero film stresses were achieved by choice of optimum nitrogen N2 flow. SIMS analysis of Cu diffusion through blanket PVD Ti-Si-N (300Å) after an anneal at 390°C/3 hour showed a near overlap of the Cu profile compared to the profile of an unannealed SiO2/PVD Ti-Si-N /Cu film stack, indicating that the Cu did not diffuse significantly through the barrier after anneal. Low contact resistance (0.8 Ω) and low (< 10−11 A) leakage were obtained using a dual inlaid structure with a 300 Å Ti-Si-N processed with optimized conditions. These results showed that Ti-Si-N could be used as a potential barrier for copper metallization.

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Diffusion barrier study on TaSix and TaSixNy

Cited by 3 publications

References 17 publications

The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films

The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films

Thermal stability study of TiN/TiSi2 diffusion barrier between Cu and n+Si

PVD Ti-Si-N Films Process Development for Copper Interconnect Applications

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