The Mechanism of Si Incorporation and the Digital Control of Si Content during the Metallorganic Atomic Layer Deposition of Ti-Si-N Thin Films

Abstract

Titanium‐silicon‐nitride thin films were grown by metallorganic atomic layer deposition (MOALD) using tetrakis(dimethylamido)titanium (TDMAT), ammonia, and silane at 180°C. When the reactants are injected into the reactor in the sequence ofTDMAT pulse, SiH4 pulse, and NH3 pulse, the Si content in the Ti‐Si‐N films is saturated at 18 atom %. By changing the supplying sequence in the order of TDMAT, NH3 , and SiH4 , the Si content is increased to 21 atom %. The Si content in the films is almost insensitive to the SiH4 partial pressure over a wide range of 0.27 and 13.3 Pa, because it is self‐limited by the quantity of SiH4 molecules absorbed on the film surface. By utilizing these inherent characteristics of MOALD, digital control of Si content in Ti‐Si‐N thin film is possible by controlling the number of SiH4 pulses during film deposition. The MOALD Ti‐Si‐N films have almost 100% step coverage on a 0.3 μm diam hole with an aspect ratio of 10:1. MOALD is considered to be a promising deposition method for less than 10 nm thick Ti‐Si‐N films as a Cu diffusion barrier film. © 2000 The Electrochemical Society. All rights reserved.

Covalent Attachment of a Transition Metal Coordination Complex to Functionalized Oligo(phenylene-ethynylene) Self-Assembled Monolayers

“…In the case of Al deposition, interfacial chemistry was examined using XPS, but an explicit examination of the kinetics of adsorption was not attempted. Recently, we have completed what is perhaps the most rigorous study of the reaction of a transition metal coordination complex with SAMs, in this case, the reaction of tetrakis(dimethylamido)titanium, Ti[N(CH 3 ) 2 ] 4 , a TiN precursor, − with alkyltrichlorosilane SAMs possessing −OH, −NH 2 , and −CH 3 terminal OFGs. We found by XPS that the reaction was self-limiting in all these cases.…”

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

“…Recently, PEALD SiN–AlN composite films with excellent etch resistance in HF acid were also developed by Kim et al [ 52 ]. In addition, researchers also studied ALD–TiSiN for use as a gate electrode and diffusion barrier, and ALD–RuSiN composite films for use as a Cu diffusion barrier [ 58 , 59 , 62 , 115 , 116 , 117 , 118 ].…”

The effect of NH3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor

“…It is interesting that using metal-organic precursors can achieve ALD TiN films at lower temperatures. 15) Therefore, most researches focus on the growth of TiN films using metal-organic precursors such as Ti[N(CH 3 ) 2 ] 4 (TDMAT), [16][17][18] Ti[N(C 2 H 5 ) 2 ] 4 (TDEAT), 18,19) and Ti[N(CH 3 )(C 2 H 5 )] 4 (TEMAT). 18) Among these, TDMAT is greatly preferred because it has the simplest ligand (methyl) and the smallest steric hindrance.…”