Diffusion barrier behaviors of (Ru,Ni)Al/NiAl coatings on Ni-based superalloy substrate

Electrodeposition on Superalloy Substrates: A Review

“…The absence of rumpling may be responsible for the improved corrosion resistance of Pt/Ru-modi¯ed aluminide coating. Wang et al 61 stated that the (Ru, Ni)Al layer (Fig. 5) e®ectively slows down inward di®usion of Al from the coating and outward di®usion of alloy elements such as W and Mo, then suppressing the formation of topologically close-packed phases and secondary reaction zone.…”

“…In connection with oxidation test results of Ir-Pt-modi¯ed aluminide coatings, authors reported that these coatings are promising for replacing the conventional Pt-Al ones because Ir may play a role as solid solution strengthener and does not deteriorate the creep properties of substrates. 67 Re electrodeposition was also carried out by some authors on Ni-based superalloys K3, 61 TMS-82 68 and Hastelloy X. 68 In another study, 69 MCNG Ni-based superalloy substrate was coated by electrolytic Re using a solution comprising 23 gl À ReO À 4 , 30 g/L NH 4 F, 10 gl À (NH 4 ) 2 SO 4 and H 2 SO 4 to adjust pH at 1.…”

Precipitation phases in the nickel-based superalloy DZ 125 with YSZ/CoCrAlY thermal barrier coating

“…As a result, the superalloy can be changed from the initial ␥ /␥ to a mixture of ␥, ␤ and phases owing to the decreased amount of ␥ phase in the IDZ. Simultaneously, the enrichment of Al and depletion of Ni in the IDZ can promote segregation of refractory elements such as W, Cr and Mo and the formation of TCP phases [28][29][30]17,31].…”

Thermal Stability of Ru–Al Multilayered Thin Films on Inconel 617

“…Moreover, RuAl and Al 2 O 3 possess similar coefficients of thermal expansion [12]. Accordingly, Ru-modified aluminides have been used as BCs for thermal barrier systems [13,14]. RuAl thin films that were fabricated by sputtering have also been considered for use as working layers for glass molding dies at temperatures above 600 • C [15,16] and for metallization on surface acoustic wave devices that are annealed at 800 • C under high vacuum conditions [17][18][19][20].…”