1978
DOI: 10.1063/1.90044
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Diffuse x-ray scattering from small defects in a very perfect silicon single crystal

Abstract: Two kinds of diffuse x-ray scattering were found in a very perfect silicon single crystal. One of them forms a cigar shape, extending along the [111] direction. The other is a disk shape whose normal is also parallel to the [111] direction in reciprocal space. Both diffuse scatterings are predominant along the crystal pulling [111] direction. From simple Fourier inversion of the shapes of the diffuse scatterings, it is concluded that the platelike defects and needlelike defects are the origins of the diffuse s… Show more

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Cited by 8 publications
(5 citation statements)
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“…As the growth above 360°C leads to Te-rich surface conditions, 23 this seems to favor the SF nucleation; indeed, a sensitivity of SF nucleation towards VI-group atoms has been already reported in the case of ZnSe epilayers grown by MOVPE on GaAs. 24 Furthermore, the HR-RSMs reported in Fig.…”
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confidence: 96%
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“…As the growth above 360°C leads to Te-rich surface conditions, 23 this seems to favor the SF nucleation; indeed, a sensitivity of SF nucleation towards VI-group atoms has been already reported in the case of ZnSe epilayers grown by MOVPE on GaAs. 24 Furthermore, the HR-RSMs reported in Fig.…”
mentioning
confidence: 96%
“…much lower than the hillock densities, estimated instead around 10 6 -10 7 cm -2 (Ref. 23). This rules out the possibility that substrate dislocations propagating into the epilayers could reach the surface and act as source for hillock formation.…”
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confidence: 99%
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