Diffraction Limit for a Periodic Pinhole Array

Abstract

Spin-dependent electronic transport through a quantum dot side-coupled to two quantum dots and attached to ferromagnetic leads with collinear (parallel and antiparallel) magnetizations is analyzed theoretically. The intra-dot Coulomb correlations are taken into account, whereas the inter-dot ones are neglected. Transport characteristics, i.e. conductance and tunnel magnetoresistance associated with the magnetization rotation from parallel to antiparallel configurations, are calculated by the non-equilibrium Green's function technique. The Green's functions are derived by the equation of motion method in the Hartree-Fock approximation. The conductance spectra are shown to reveal features similar to the Dicke resonance in atomic physics.

Deep UV pattern definition in PMMA

“…Every aperture in the silver array of figure 2(a) should produce a farfield Airy pattern because the aperture diameters are ∼4 λ. It is important to note that the incident excitation will generate near-field diffraction as well, because the distance between the apertured metal film and the PMMA is smaller than 2a 2 /λ [12]. Hence the exposure pattern anticipated for this sample is on the boundary between the near-and far-field diffraction limits and we thus expect to see Airy disk patterns as well as constructive interference arising from near-field effects.…”

Structure and Electrical Properties of Sputter Deposited (Ba[sub 1−x],Sr[sub x])(Ti[sub 1−y],Zr[sub y])O[sub 3] Thin Films

“…However, Gbitscale DRAMs require BST with a higher dielectric constant and lower leakage current in a thinner film. Recently, Ba(Ti 1Ϫx Zr x )O 3 ͑BTZ͒ is often studied [9][10][11][12][13] instead of BST in the fabrication of thin films and ceramic capacitors because Zr 4ϩ is chemically more stable than Ti 4ϩ . However, the dielectric constant of BTZ film compared to that of BST was not sufficiently improved.…”

“…BSTZ films are considered to be one of the promising candidates for DRAM application, because the (1 Ϫ x)BaTiO 3 ϪxSrZrO 3 solid solution exists in a single phase for a wide range of compositions and shows paraelectric properties and a high dielectric constant for x values above 0.2. Even though the properties of BSTZ ceramics have been reported by several authors, 12,13 there has not yet been much work carried out on BSTZ films. In this study, BSTZ thin films were deposited using a conventional radio frequency ͑rf͒ magnetron sputtering system.…”