The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode.
It is shown theoretically that the nonlinear optical Kerr effect can be used to build an all optical configuration controlling spectral switches. The main advantage in it is that it can greatly simplify the control method compared to previous schemes using the aperture mechanism or electro-optical one.
It is shown that the structure information for a lattice or periodic pattern can be obtained by measuring the diffracted spectrum of a broadband light source at one spatial position in the far field.
High efficiency luminescent amorphous silicon nitride films grown at room temperature with subsequent plasma oxidation were used as the active layers in the electroluminescent devices. A strong uniform green-yellow light emission from the devices was realized under forward biased conditions. It was found that the turn-on voltage could be reduced to as low as 6V while the electroluminescence (EL) intensity is significantly enhanced by two to four times by using p-type Si anode instead of indium tin oxide substrate under the same forward voltage. Furthermore, the EL peak position is blueshifted from 560to540nm, which is more close to that of the corresponding photoluminescence peak. The origin of light emission is suggested to be the same kind of luminescent centers related to the Si–O bonds.
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