Cubic-phase GaN light-emitting diodes

Yang, Hui; Zheng, Lianxi; Li, J. B.; Wang, X. J.; Xu, Di; Wang, Y. T.; Hu, Xiaotao; Han, Pin

doi:10.1063/1.123019

Cited by 106 publications

(52 citation statements)

References 15 publications

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“…3,4,5,6 It is possible, however, to grow thin epitaxial films of In x Ga 1−x N with the cubic zinc-blende (ZB) structure. 7,8,9,10,11,12,13,14 The phase stability of In x Ga 1−x N alloys has been the subject of several experimental 3,4 and theoretical studies 15,16,17,18,19,20,21,22,23,24 . For example, there have been more than ten calculations of the In x Ga 1−x N pseudo-binary phase diagram.…”

Section: 34mentioning

confidence: 99%

First-principles calculation of the thermodynamics ofInxGa1−xNalloys: Effect of lattice vibrations

2006

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The thermodynamics properties of the wurtzite and zinc-blende InxGa1−xN alloys are calculated using first-principles density-functional calculations. Special quasi-random structures are used to describe the disordered alloys, for x = 1/4, 1/2, and 3/4. The effect of lattice vibrations on the phase diagram, commonly omitted from semiconductor alloy phase diagram calculations, are included through first-principles calculations of phonon spectra. Inclusion of lattice vibrations leads to a large reduction in the order-disorder critical temperature (∼ 29% and ∼ 26% for the wurtzite and zincblende structures, respectively) and changes the shape of the solubility and spinodal curve through changes in the entropies of the competing phases. Neglect of such effect produces significant errors in the phase diagrams of complex ordered semiconductor compounds. The critical temperature for phase separation is 1654 K (1771 K) for the wurtzite (zinc-blende) structures. The predicted phase diagrams are in agreement with experimental measurements on MOCVD InxGa1−xN films.

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Section: 34mentioning

confidence: 99%

First-principles calculation of the thermodynamics ofInxGa1−xNalloys: Effect of lattice vibrations

2006

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“…It could be heteroepitaxied on conducting substrate instead of insulating sapphire used for h-GaN. The recent fabrication of a c-GaN LED using MOCVD [2] indicates a promising future for the blue LED. It was already demonstrated that cubic phase is preferentially grown under Ga-rich conditions [3 to 5], we have verified this tendency.…”

Section: Introductionmentioning

confidence: 98%

MOCVD Growth of Cubic Gallium Nitride: Effect of V/III Ratio

Moret¹,

Ruffenach-Clur

Moreaud

et al. 1999

phys. stat. sol. (a)

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“…Cubic GaN (c-GaN) has enormous potential due to its easy fabrication process for blue-light emitting laser diode (LD) structure with cleaved facets [1], though the bluelight emitting LDs have been already realized by using hexagonal GaN (h-GaN) epilayers [2]. Although the growth of c-GaN epilayers on (001) GaAs or 3C-SiC has been accomplished by various methods [3 to 5], the crystalline quality of the c-GaN epilayer is not as good as the h-GaN epilayers.…”

Section: Introductionmentioning

confidence: 99%