We have patterned polymethyl methacrylate (PMMA) resist by exposing it to the
fifth harmonic (213 nm) of an Nd:YAG source through metalized apertures in
contact with the resist. Interference patterns with both near- and far-field origins
were observed. In order to test the contrast and uniformity of exposure, we
deposited germanium onto developed areas to form arrays with feature sizes of
∼200 nm. We present a straightforward model for interference effects generated in our process,
and discuss opportunities for direct-write lithography through single apertures.
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