1988
DOI: 10.1016/0022-0248(88)90346-6
|View full text |Cite
|
Sign up to set email alerts
|

Diffraction imaging of high quality bismuth silicon oxide with monochromatic synchrotron radiation: Implications for crystal growth

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
15
0

Year Published

1990
1990
2005
2005

Publication Types

Select...
4
1
1

Relationship

0
6

Authors

Journals

citations
Cited by 16 publications
(15 citation statements)
references
References 13 publications
0
15
0
Order By: Relevance
“…Melt growth of small (Ӎ8 × 6 × 12 mm) BSO crystals under near-equilibrium conditions [34] shows however that the optical inhomogeneity cannot be explained solely by growth rate instability and anisotropy. Steiner et al [34] suppose that the periodic optical inhomogeneity in faceted crystal growth is associated with deviations from stoichiometry within the homogeneity range of the crystal ---and with the variation in impurity concentration due to small temperature fluctuations.…”
Section: Inhomogeneities In Sillenite-type Crystalsmentioning
confidence: 98%
See 2 more Smart Citations
“…Melt growth of small (Ӎ8 × 6 × 12 mm) BSO crystals under near-equilibrium conditions [34] shows however that the optical inhomogeneity cannot be explained solely by growth rate instability and anisotropy. Steiner et al [34] suppose that the periodic optical inhomogeneity in faceted crystal growth is associated with deviations from stoichiometry within the homogeneity range of the crystal ---and with the variation in impurity concentration due to small temperature fluctuations.…”
Section: Inhomogeneities In Sillenite-type Crystalsmentioning
confidence: 98%
“…Melt growth of small (Ӎ8 × 6 × 12 mm) BSO crystals under near-equilibrium conditions [34] shows however that the optical inhomogeneity cannot be explained solely by growth rate instability and anisotropy. Steiner et al [34] suppose that the periodic optical inhomogeneity in faceted crystal growth is associated with deviations from stoichiometry within the homogeneity range of the crystal ---and with the variation in impurity concentration due to small temperature fluctuations. Note that precision measurements on samples cut from the seed and tail ends of BSO and BGO single crystals about 400 mm in length revealed no differences in density or lattice parameter [13,14], suggesting that both compounds have an insignificant homogeneity range, in contrast to what was reported by Hill and Brice [39].…”
Section: Inhomogeneities In Sillenite-type Crystalsmentioning
confidence: 98%
See 1 more Smart Citation
“…All of these observations are consistent with a growth model in which growth begins in the extreme [110) corner of this crystal (in figure 1, for example, this is the top corner) and proceeds relatively uneventfully in the [110) direction (downward in figure 1, for example), or at least in a direction projected onto this direction in the images, until just before the onset of the wide swath of a high density of additional phase features, one of which initiated the sharp lattice twist visible in figures 9,12,16,19,22,25. This twist then propagated for the remainder of the growth.…”
Section: Terrestrial Crystal Compared With Spacelab III Crystalmentioning
confidence: 99%
“…Therefore, indirect: image detectors cannot be used. Although vidicon detectors are used currently to follow image-changes as the incident or glancing angle of an x-ray beam is changed [40], they have never been tested in practice as a means of viewing isolated dislocations. We have used a high-quality GaAs crystal to test the practical applicability of a vidicon detector as a replacement for wet film technology.…”
Section: A Advanced X-ray Imaqe Detectorsmentioning
confidence: 99%