1988
DOI: 10.1109/33.16683
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Differential thermal expansion in microelectronic systems

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Cited by 19 publications
(2 citation statements)
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“…Temporal temperature variations are caused due to time-varying power dissipation rates. Rapid changes in temperature may cause deformation of the package [Royce 1988] and failure due to fatigue.…”
Section: Introductionmentioning
confidence: 99%
“…Temporal temperature variations are caused due to time-varying power dissipation rates. Rapid changes in temperature may cause deformation of the package [Royce 1988] and failure due to fatigue.…”
Section: Introductionmentioning
confidence: 99%
“…The oxidation and deposition temperatures used for the fabrication of these devices are different from both the temperatures at which lithographic steps will be canied out and the temperatures at which they will be used. The differential thermal expansion mismatch between the constituent layers of these materials introduces the potential for wafer curvature and thus problems in the wafer processing steps (Royce, 1988).…”
Section: Introductionmentioning
confidence: 99%