1996 Proceedings 46th Electronic Components and Technology Conference
DOI: 10.1109/ectc.1996.550882
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A novel bonding technique to bond CTE mismatched devices

Abstract: Thermal expanSian mismatch between electronic devices and their substrates induces stresses in the assembly during bonding and operation. These stresses in extreme cases cause cracking of the electronic device during bonding. For GaAs devices back-side bonded to a high conductivity artificial diamond substrate using Au-Sn solder, analytical and numerical analyses were conducted to determine the bonding stresses in the GaAs die. Bonding et s were conducted to study the effect of varying cooling rates on die fai… Show more

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Cited by 11 publications
(3 citation statements)
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“…A comparison of room-temperature creep properties of three Sn-Sb alloys, Sn-3.5In-2.4Sb, and several other potential creep-resistant lead-free solder alloys. The curve in the bottom right corner 19 represents "creep properties" derived from stress relaxation data for Sn-80Au. Volume fractions of the intermetallic particles that form when these particles react with tin are expected to be a good deal greater than 15%.…”
Section: Discussionmentioning
confidence: 99%
“…A comparison of room-temperature creep properties of three Sn-Sb alloys, Sn-3.5In-2.4Sb, and several other potential creep-resistant lead-free solder alloys. The curve in the bottom right corner 19 represents "creep properties" derived from stress relaxation data for Sn-80Au. Volume fractions of the intermetallic particles that form when these particles react with tin are expected to be a good deal greater than 15%.…”
Section: Discussionmentioning
confidence: 99%
“…Devices able to switch at higher frequencies allow for a reduction in size of power devices like magnetics and capacitors. Compared with the machine, the converter has a much higher power density with typical heat flux densities in the range of 50-500 W/cm 2 for power semiconductor devices, compared with 0.1-3 W/cm 2 for magnetic components and less than 0.1 W/cm 2 for capacitors [200]. This is due to its smaller volume and high power handling capabilities [201].…”
Section: Challenges In Imd Designmentioning
confidence: 98%
“…The slow cooling process also shows better metallurgical effects such as diffusion and alloying [93]. However, this cooling scheme requires long bonding duration [94].…”
Section: Bonding Process Considerationsmentioning
confidence: 99%