Differential Al–Ga interdiffusion in AlGaAs/GaAs and AlGaInP/GaInP heterostructures

Abstract

Interdiffusion of Al and Ga in Al0.4Ga0.6As/GaAs and Al0.3Ga0.2In0.5P/Ga0.6In0.4P quantum wells has been investigated by measuring the photoluminescence of samples annealed at temperatures from 850 to 1065 °C with and without an SiO2 cap. At 1000 °C under an SiO2 cap, the Al–Ga interdiffusion coefficient is found to be at least two orders of magnitude larger for an AlGaAs/GaAs quantum well compared to an AlGaInP/GaInP quantum well within the same sample. By comparing calculated photoluminescence shifts with measured values, an activation energy of 4.5 eV is found for the Al–Ga interdiffusion in an AlGaAs/GaAs quantum well under an SiO2 cap.

Disordering of the ZnCdSe single quantum well structure by Cd diffusion

“…10 This temperature is much higher than our result for the ZnCdSSe/ZnSSe heterostructure. We found that the superlattice was disordered after 500°C annealing.…”

Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique

“…The Al-Ga interdiffusion coefficient is proportional to the concentration of the triply-charged column III vacancy [9,11,14]. Ga desorption is believed to enhance interdiffusion by introducing column III vacancy in GaAs layer growth process, at the same time, Ga concentration is decreased as the growth temperature increases, which can result in the increase in the Al concentration.…”

“…At the same time, this approach results in a significant increase in component intermixing in the process of superlattice preparing due to the diffusion length shortening. Tremendous research effort has been focused to optimize the performance of electronic and optoelectronic devices by postgrowth diffusion technology [5][6][7][8][9][10][11], while less attention has been paid to in situ diffusion in superlattice with barrier layers of submonolayer thickness.…”

Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

“…The technique was also applied to selective intermixing of InGaP red and GaAs infrared dual ͑QWs͒. 4 It was found that the band gap of the GaAs/AlGaAs QW could be raised above that of the InGaP/͑AlGa͒ 0.5 In 0.5 P QW by selective intermixing while not changing the band gap of the red QW. 5 However, the long annealing time and high annealing temperature ͑Ͼ900°C͒ needed for this intermixing caused defect generation in the phosphorous based compounds such as AlInP which prevented the fabrication of red/IR dual wavelength lasers after the anneal.…”