Disordering of the ZnCdSe single quantum well structure by Cd diffusion

Momose, Masayuki; Taike, A.; Kawata, M.; Gotoh, Jun; Nakatsuka, S.

doi:10.1063/1.117210

Cited by 12 publications

(6 citation statements)

References 9 publications

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“…accompanied by any change in the spectral position of PL bands or in their excitation spectra. The effect of PL intensity increase has been found earlier in CdZnSe/ZnSe QW heterostructures subjected to postgrowth thermal annealing at 250-700 0 C [ [23][24][25][26][27] and explained by interfacial smoothing resulting from the small-scale lateral diffusion. The increase in the intensity of QW luminescence band was observed without any changes in its spectral position [24][25][26] or with a noticeable blue shift [23,27].…”

Section: Discussionmentioning

confidence: 65%

Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure

Borkovska¹

2010

Semicond. Phys. Quantum Electron. Optoelectron.

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Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures (T ann  270 ºС) results in an increase by a factor of 2-3 of the intensity of two photoluminescence bands observed, the first being caused by excitonic transitions in QDs and the second one being connected with the defect complex including a column II vacancy. The effect is supposed to be caused by annealing of as-grown nonradiative defects. Annealing at higher temperatures (T ann > 270 ºС) stimulates a decrease of the QD photoluminescence band intensity and up to 100 meV blue shift of its peak position. The former is explained by generation of extended defects and reduction of the QD density. The blue shift observed at 370-430 ºС is ascribed to diffusion of cadmium from QDs that also results in reduction of the QD density. It is found that the energy of excitonic transitions in the wetting layer does not change upon annealing. Lower thermal stability of QDs as compared to that of the wetting layer has been explained by strain-enhanced lateral Cd/Zn interdiffusion via vacancies. The presence of column II vacancies in the wetting layer is proved by characteristics of defect-related PL band and its excitation spectra.

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Section: Discussionmentioning

confidence: 65%

Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure

Borkovska¹

2010

Semicond. Phys. Quantum Electron. Optoelectron.

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“…At low annealing temperatures (Т ann ≤ 270 °С), a spectral position of the PL bands does not change, while their intensity increases. The effect of PL intensity increase upon thermal annealing has been observed in CdZnSe/ZnSe QW heterostructures [13], as well as in InGaAs/GaAs QD heterostructures [14,15] and ascribed to QW interface smoothing or nonradiative defect annealing. Since the intensities of the I QD and I D bands increase similarly, we suppose that it is due to annealing of the as-grown defects that act as the centers of nonradiative recombination.…”

Section: Methodsmentioning

confidence: 99%

Study of thermal stability of CdSe/ZnSe quantum dot heterostructures

Borkovska

Korsunska

Кушниренко

et al. 2012

Phys. Status Solidi C

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Here we report on the effect of post‐growth thermal annealing at 200‐440 °C on the photoluminescence (PL) characteristics of CdSe/ZnSe quantum dot (QD) and CdZnSe/ZnSe quantum well (QW) heterostructures grown by molecular beam epitaxy. After heat treatment at temperatures lower than 270 °C, the PL intensity from both type of structures increases, while at temperatures above 270‐340 °C it decreases. A blue shift of the excitonic band position caused by Cd out‐diffusion from the QDs (QWs) is observed above 320‐340 °C and is five times larger for the QD‐related PL band than for the QW one. It is found that the energy of the excitonic transitions in the wetting layers does not change upon annealing. Lower thermal stability of the QDs as compared to that of the wetting layer and of the QW is explained by lateral Cd/Zn interdiffusion in the wetting layers via column II vacancies (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…5 Modulation doping of this material was also accomplished by the improvement in epitaxy. 10,11 There are also investigations on the interlayer diffusion of CdZnTe heterostructures, which were performed by using x-ray diffraction. 6,7 These investigations have also brought in the discovery of a new excitation state in two-dimensional ͑2D͒ electron gas: the negative and positive trion in Te-based quantum wells ͑QWs͒.…”

Section: Introductionmentioning

confidence: 99%

Post-growth process relaxation properties of strained Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well heterostructures grown by molecular beam epitaxy

Jacob

Myrberg

Nur

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inNear infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer J. Vac. Sci. Technol. B 32, 02C105 (2014); 10.1116/1.4863496Study of intersubband transitions of Zn x Cd 1 − x Se ∕ Zn x ′ Cd y ′ Mg 1 − x ′ − y ′ Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications Determination of the indices of refraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-well structures J. Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substratesInvestigation of e-h pair compression in molecular beam epitaxy grown ZnCdSe/ZnSe multiquantum wells at volume excitation by electron beamThe post-growth structural stability regarding relaxation and defect propagation in Cd 0.83 Zn 0.17 Te/Cd 0.92 Zn 0.08 Te/Cd 0.83 Zn 0.17 Te quantum well ͑QW͒ heterostructures grown on ͓001͔ oriented Cd 0.88 Zn 0.12 Te substrates at 300°C by molecular beam epitaxy is investigated. The investigated heterostructures were subjected to post-growth thermal treatment in an ambient atmosphere in a temperature range between 280 and 550°C for 3 h each. We have used high-resolution x-ray diffraction as the main characterization tool. High-resolution rocking curves as well as the powerful two-dimensional reciprocal space mapping were employed in both symmetrical as well as asymmetrical reflections. The results indicate that at a post-growth temperature cycle of 350°C for 3 h slight modification of the Cd 0.83 Zn 0.17 Te/Cd 0.92 Zn 0.08 Te barrier/QW heterointerface smoothness is affected. This indicates the onset of migration of Zn atoms at this post-growth temperature time cycle. At 450°C, this effect is more pronounced and seen as the complete disappearance of thickness fringes. For higher post-growth thermal treatment at 550°C for 3 h, a high relaxation level accompanied by Zn content reduction is observed. A reduction of the Zn content down to 0.11 fractional value in the thick Cd 0.83 Zn 0.17 Te barrier is attributed to Zn out diffusion and/or Zn precipitation.

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Disordering of the ZnCdSe single quantum well structure by Cd diffusion

Cited by 12 publications

References 9 publications

Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure

Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure

Study of thermal stability of CdSe/ZnSe quantum dot heterostructures

Post-growth process relaxation properties of strained Cd0.92Zn0.08Te/Cd0.83Zn0.17Te quantum well heterostructures grown by molecular beam epitaxy

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