Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

Sun, Dongming; Treat, D.W.; Beernink, K. J.; Bringans, R. D.; Kovács, G.

doi:10.1063/1.122284

Cited by 6 publications

(4 citation statements)

References 7 publications

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“…Monolithically integrated red/IR lasers were fabricated sideby-side with a photolithographically defined spacing of exactly 50 m as described elsewhere [4]. The fabrication relied on MOCVD-type epitaxial growth of a full-red laser structure consisting of 750-nm-thick AlInP cladding layers, a 250-nm-thick (Al Ga ) In P waveguide and an 8-nmthick Ga In P QW.…”

Section: Fabrication Technologymentioning

confidence: 99%

“…Our device therefore consists of a monolithically integrated red/infrared (IR) dual-beam laser flipchip-bonded on a blue LED. The former are fabricated side by side with 50-m spacing by selective etch of the red and regrowth of the IR laser structure [4]. A PbSn-solder-based flipchip bonding process [5] was used to package these red/IR lasers on top of a blue LED [6].…”

Section: Introductionmentioning

confidence: 99%

“…However, since the required wavelength differences between them might span a wide range, monolithic integration is not always feasible. A variety of possibilities, among them monolithic solutions using intermixing [1], stacked growth [2], wafer fusion [3], and side-by-side etch and regrowth [4], or hybrid integration schemes such as sideby-side mounting have already been investigated for achieving multiple wavelength lasers.…”

Section: Introductionmentioning

confidence: 99%

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Multiwavelength light emitters for scanning applications fabricated by flipchip bonding

Hofstetter

Sun

Dunnrowicz

et al. 1998

IEEE Photon. Technol. Lett.

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Abstract-We present a multiwavelength light source which was fabricated using a self-aligned flipchip bonding technique. The device consists of an InGaN-GaN light-emitting diode emitting light at around 420 nm, on top of which we flipchip-bonded a monolithically integrated red/infrared dual-beam laser. The upper two lasers were built by selective removal of the red laser, and subsequent regrowth of an infrared laser structure. Since all processes, including the deposition of the PbSn solder bumps for bonding, were based on photolithographic precision, tight alignment tolerances of 6 6 62 m in the lateral direction could be fulfilled between the ridge waveguides of the three light emitters. For a high-speed color scanning system, this is an important design criterion because it will allow the use of a single scanning optics for the three laser beams.Index Terms-Flipchip-bonding, hybrid integration, lateral alignment, multiwavelength light emitters.

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Section: Fabrication Technologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Multiwavelength light emitters for scanning applications fabricated by flipchip bonding

Hofstetter

Sun

Dunnrowicz

et al. 1998

IEEE Photon. Technol. Lett.

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“…They are used for the fabrication of high quality stripe lasers, 1,2 nonabsorbing mirror sections of Fabry-Perot lasers, 3 and also for the fabrication of photonic integrated circuits. [4][5][6] Many different semiconductors have shown similar effects with specific temperatures for each material system, be it GaAs/AlGaAs, GaP/InGaAsP, or even GaN/InGaN.…”

mentioning

confidence: 99%

Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

Hofstetter

Francesco

Martin

et al. 2011

Applied Physics Letters

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We demonstrate the effect of rapid thermal annealing on heavily Si-doped AlN/GaN quantum wells. After 1000°C annealing during 5, 10, and 20 min, the dominant effect was interdiffusion of Si rather than intermixing between the Al and Ga atoms. Both their original value and the magnitude of the changes after annealing reveal that intersubband absorption and photovoltage are related to two different optical transitions as follows: absorption occurs in the 1 to 2 intersubband transition, whereas photovoltage is due to a subsequent process from the 1 to 2 and the manifold of 2 to higher order transitions.Impurity interdiffusion and quantum well ͑QW͒ intermixing are two versatile techniques which have seen widespread use in many semiconductor based technologies. They are used for the fabrication of high quality stripe lasers,

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Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes

Jung

Suchalkin

Kipshidze

et al. 2010

Applied Physics Letters

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We have designed and developed dual wavelength type I quantum well light emitting diodes (LEDs) operating at 2 μm and 3–3.4 μm wavelengths with independently controlled intensities. The room temperature quasicontinuous wave output power was 2.8 mW at 2 μm and 0.14 mW at 3 μm. The design of the dual wavelength structure allows for monolithically integrating LED pixels with different wavelengths opening the way for the fabrication of multiwavelength LED arrays for multispectral and hyperspectral imaging applications.

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Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate

Abstract: Articles you may be interested inExtraordinarily wide optical gain spectrum in 2.2-2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers J. Appl. Phys. 90, 4281 (2001); 10.1063/1.1391421High-temperature optical gain of 980 nm InGaAs/AlGaAs quantum-well lasers

Cited by 6 publications

References 7 publications

Multiwavelength light emitters for scanning applications fabricated by flipchip bonding

Multiwavelength light emitters for scanning applications fabricated by flipchip bonding

Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes

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