Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes

Abstract

We have compared resistance switching of NiO films deposited on Pt and SrRuO3 (SRO): unipolar switching in Pt/NiO/Pt and bipolar switching in Pt/NiO/SRO. Linear fitted current-voltage curves and capacitance-voltage results show that on- and off-states conductions in unipolar switching are dominated by inductive Ohmic behavior and Poole–Frenkel effect, respectively. However, the conductions of on- and off-states in bipolar switching follow capacitive Ohmic behavior and Schottky effect, respectively. Therefore, we infer that the mechanisms of the unipolar and bipolar switching behaviors in NiO films are related with changes in bulk-limited filamentary conduction and interfacial Schottky barrier, respectively.

Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

“…2͑f͔͒. This behavior is consistent with previous reports on the interfacial effects, 7,21 where the migration of oxygen vacancies in the vicinity of the interface drives RS in various heterojunctions. 22 Under a negative electric field, oxygen vacancies with positive charges migrate away from the Schottky-type interface between Mn-doped ZnO and Si, which widens the depletion layer, resulting in the HRS.…”

“…The LRS follows the Ohmic behavior, consistent with the typical filamentary model. 5,7,8,20 On the other hand, for Pt/Mn:ZnO/Si, the HRS is dominated by the Schottky emission at low electric field and by P-F emission at high electric field, whereas the LRS exhibits the SCL conduction ͓Fig. 2͑f͔͒.…”

“…6 In a very recent report, different RS mechanisms of NiO thin films were explored by altering the bottom electrodes; Pt and SrRuO 3 electrodes led to filamentary conduction and formation of interfacial Schottky barrier, respectively. 7 In this letter, we report that Mn-doped ZnO thin films grown on Pt and Si show unipolar and bipolar RS behaviors, respectively. By fitting to the IV curves and considering the area dependence of the ON/OFF resistance, we interpret the unipolar RS by filamentary conduction and the bipolar RS by interfacial effect.…”

Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory

“…1-3 Based on the dependence of switching characteristic on electric polarity, there are two different types of resistive switching (RS) modes: unipolar RS (URS) mode and bipolar RS (BRS) mode. 4 Generally, either URS or BRS has been reported for a single system with different characteristics observations. For example, URS exhibits higher resistance ratio (high resistance state (HRS) to low resistance state (LRS) (R HRS /R LRS )), easier reading operation, and higher memory density.…”

Compliance current induced non-reversible transition from unipolar to bipolar resistive switching in a Cu/TaOx/Pt structure

“…This result is interesting because for normal BRS, the switching has been often understood as the change in Schottky barrier between the oxide and the metal electrode, so the device in either HRS or LRS should behave as a capacitor without CFs connecting the two electrodes. 18,19 Furthermore, if conducting filaments exist in both LRS(URS) and LRS(BRS), the lower resistance of LRS(BRS) implies a high density or a larger diameter of the filaments, i.e., stronger conducting paths in LRS(BRS) than in LRS(URS), which suggests that the transition from URS to BRS may be caused by the growth of filaments under higher I c .…”