Dielectric waveguide vertically coupled to all-silicon photodiodes operating at telecommunication wavelengths

Abstract

We present a method for detecting light in the 1550 nm wavelength window based on a silicon nitride waveguide that is vertically coupled to a silicon photonic crystal cavity. The absorption in silicon arises from deep-levels created by ion implantation, thereby providing excellent CMOS compatibility. We demonstrate a responsivity of 0.108 A/W at À10 V reverse bias with a dark current of 9.4 nA. Our work demonstrates one of the smallest wavelength selective photodectors realised to date. By cascading such detectors we also demonstrate a two-channel demultiplexer.

Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

“…Lasing matching the DA cavity wavelength was also obtained, achieving values for power and sidemode suppression of ~1.2 mW and ~ 35 dB, respectively. Since PhC cavities show extremely small footprint and wide free spectral range as a result of their high Q/V ratio [13], the architecture here presented an ideal candidate for WDM applications, especially in conjunction with other PhC cavity solutions [14,15]. However, the flexibility of the configuration also make them suitable for several different applications, including other light-based communications and sensing [16].…”

Low-loss, compact, spot-size-converter based vertical couplers for photonic integrated circuits

“…The silicon-on-insulator (SOI) platform is widely used in silicon photonics because it allows the realization of both high-performance optoelectronic components, e.g. high-speed modulators and photodetectors [3,4] and passive elements, such as low-loss waveguides or high-quality optical resonators [5,6]. Together with efficient coupling schemes, such as grating couplers and spot size converters [7,8] for fibre-to-chip coupling, the SOI platform provides many of the vital elements required for on-chip, inter-chip and optical communications links.…”

Sub-bandgap polysilicon photodetector in zero-change CMOS process for telecommunication wavelength

“…There have been many recent demonstrations of defect state based photodetectors. Ion implantation is a common method to introduce damage in crystalline silicon [16][17][18][19]. Additionally, surface state absorption assists sub-bandgap absorption as well [20].…”