Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

Li, J.; Majety, S.; Dahal, R.; Zhao, Wei; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.4764533

Cited by 128 publications

(125 citation statements)

References 33 publications

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“…Carbon to boron (C:B) ratio is varied from ∼8 to 80 for a C 3 H 8 flow rate from 0.5 sccm to 5 sccm. Figure 2(a) shows a representative X-ray diffraction (XRD) θ -2θ scan of a h-(BN) 1-x (C 2 ) x sample with x = 0.032 revealing a lattice constant of c = 6.70 Å, which closely matches with a value of c = 6.67 Å for hexagonal BN (h-BN) epilayers grown at the same temperature 15,16 and also with that of graphite ( Fig. 1(a)).…”

Section: Methodssupporting

confidence: 55%

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Uddin

Doan

et al. 2014

AIP Advances

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The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN) through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN)-rich h-(BN)1-x(C2)x alloys were synthesized by metal-organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. Hall-effect measurements revealed that homogeneous (BN)-rich h-(BN)1-x(C2)x alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm2/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS) was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C3H8)) employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN)1-x(C2)x alloys n-type and corroborates the Hall-effect measurement results.

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Section: Methodssupporting

confidence: 55%

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Uddin

Doan

et al. 2014

AIP Advances

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“…Such luminescence investigations showed many bands in the blue and near UV region, but the near bang gap luminescence was not observed [75]. Nevertheless, the width of the band gap was estimated to be not lower than [83,84,85,86]. Deposition of such structures is easily observed by techniques used for the structural investigations such as XRD and TEM [83,87].…”

Section: History Of Bnmentioning

confidence: 93%

“…Therefore, it makes sp 2 -BN even more attractive for deep UV applications. sp 2 -BN is an intrinsic dielectric that exhibits a low dielectric constant, seen from the low refractive index of 1.65 parallel to the c-axis and 2.05 in the perpendicular direction, and a high breakdown field of ~4.4 MV/cm [28,29,30]. These properties make this material suitable for applications as a dielectric material in high speed and high power electronics.…”

Section: Properties and Applications Of Sp 2 -Bnmentioning

confidence: 99%

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Chubarov¹

2014

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The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp 2 hybridised Boron Nitride (sp 2 -BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp 2 -BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures.For the growth of sp 2 -BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H 2 as carrier gas is found to be necessary for the growth of crystalline sp 2 -BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp 2 -BN film.It was observed that for the growth of crystalline sp 2 -BN on c-axis oriented -Al 2 O 3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp 2 -BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp 2 -BN is 1500 °C. Nevertheless, the growth of crystalline sp 2 -BN was also observed on -Al 2 O 3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp 2 -BN was formed, according to X-ray diffraction.Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on Om man skulle kunna göra ljusdioder av BN skulle dessa sända ut ljus med en våglängd på cirka 220 nm alltså den typen av ultraviolettljus (UV) som ozonlagret filtrerar bort från solen. Av sådana ljusdioder skulle man sedan kunna göra vita ljusdioder genom att använda en luminofor, vilket är ett material som absorberar UV-ljus och sedan sänder ut vitt ljus, men ännu mera spännande skulle det vara att använda ljusdioderna för vattenrening då denna typ av UV-ljus dödar bakterier.Eftersom BN bildar samma kristallstrukturer som kol, så är den grafitlika, sp 2 -hybridiserade formen av BN mycket intressant att använda tillsammans med grafen.Beräkningar har visat att om man använder sp 2 -BN som substrat till grafen så kommer man åt större del av de förutspådda materialegenskaperna för grafen än om man använder andra substrat.Syftet med detta arbete har varit att utveckla en syntesprocess för tunna filmer av sp 2 -BN med tillräckligt hög kvalité för att kunna börja utforska alla möjligheter med BN, för detta har en teknik som kal...

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“…Thus, h-BN layers are highly important optoelectronics device materials used in deep UV lasers and light-emitting diodes [13,17,[20][21][22][23]. The atomic vacancies in h-BN layers can be introduced using electron beam irradiations and are shown to be useful as a source of magnetism [10,[24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Formation and Physical Properties of h-BN Atomic Layers: A First-Principles Density-Functional Study

Fujimoto

2017

Advances in Materials Science and Engineering

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Hexagonal boron nitride (h-BN) atomic layers have attracted much attention as a potential device material for future nanoelectronics, optoelectronics, and spintronics applications. This review aims to describe the recent works of the first-principles densityfunctional study on h-BN layers. We show physical properties induced by introduction of various kinds of defects in h-BN layers. We further discuss the relationship among the defect size, the strain, and the magnetic as well as the electronic properties.

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Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

Cited by 128 publications

References 33 publications

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Formation and Physical Properties of h-BN Atomic Layers: A First-Principles Density-Functional Study

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