2001
DOI: 10.1016/s0169-4332(01)00378-6
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Dielectric relaxation in polycrystalline thin films of In2Te3

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Cited by 74 publications
(25 citation statements)
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“…(2) also predicts that the measured capacitance should be decreased with the increasing frequency and it reaches to a constant value at the higher frequency [19][20][21]. This behavior can be attributed to the effect of charge redistribution by carrier hopping on defects [22,23]. At the lower frequencies, the charge on the defects can be rapidly redistributed, so that the defects closer to the positive side of the applied field become negatively charged, while the defects closer to the negative side of the applied field become positively charged.…”
Section: Resultsmentioning
confidence: 90%
“…(2) also predicts that the measured capacitance should be decreased with the increasing frequency and it reaches to a constant value at the higher frequency [19][20][21]. This behavior can be attributed to the effect of charge redistribution by carrier hopping on defects [22,23]. At the lower frequencies, the charge on the defects can be rapidly redistributed, so that the defects closer to the positive side of the applied field become negatively charged, while the defects closer to the negative side of the applied field become positively charged.…”
Section: Resultsmentioning
confidence: 90%
“…1. This behavior can be attributed to the effect of charge redistribution by carrier hopping on defects [33][34][35]. At the lower frequency, the charge on the defects can be rapidly redistributed, so that defects closer to the positive side of the applied field become negatively charged, while defects closer to the negative side of the applied field become positively charged.…”
Section: Resultsmentioning
confidence: 99%
“…According to Eq. (4), the increase of capacitance C with temperature may be due to decrease of the sample resistance R with temperature [32]. This behavior can be attributed to the eect of charge redistribution by mean carrier hopping on defects [3335].…”
Section: Temperature and Frequency Dependences Of The Measured Capacimentioning
confidence: 99%