Conduction Mechanism of 4-Aminoantipyrine as a New Organic Semiconductor

Abstract

X-ray diraction pattern of 4-aminoantipyrine was studied and it is a single phase with a polycrystalline structure. 4-aminoantipyrine has hexagonal structure with space group P 6/mcc. The electrical properties of 4-aminoantipyrine were studied in the temperature range (303373 K) below the melting point of the studied compound and in the frequency range (100 Hz100 kHz). The obtained results of dc conductivity showed a positive temperature coecient at the lower temperatures and a negative temperature coecient at the higher temperatures. The ac conductivity obeys the power law. Ac conductivity can be reasonably interpreted in terms of overlapping-large polaron tunneling model and the correlated barrier hopping model. 4-aminoantipyrine is a good candidate for electronic device due to its electrical conductivity and capacitance.

Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

“…as a function of temperature. A change in the slope of the derivative of ANC at around 600 K was noted, indicating that the available density of trapped charge states disappeared around 600 K, which is in a good agreement with the conductance analysis reported by [39]. Fig.…”

Role of Mn/Cr dual-doped ZnO nanoparticles of diluted magnetic semiconductors: influence on structural and electrical properties

“…This implies the validity of the thermally activated behavior of electron transfer over the barrier between two sites having their own columbic potential wells [57]. Region (II) (above 150 °C) follows a small polaron (SP) tunneling which is usually associated with an increase in (s) with rising temperature, implying the activated behavior of polaron [58]. On the other hand, the exponent (s) is nearly equal to 0.8 and nearly independent on temperature for samples 5Mn5Cr and 7Mn3Cr, where the quantum mechanical tunneling (QMT) model predominates.…”