Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure

Barkhordari, Ali; Özçelik, Süleyman; Pirgholi‐Givi, Gholamreza; Mashayekhi, Hamid Reza; Altındal, Ş.; Azizian‐Kalandaragh, Yashar

doi:10.1007/s12633-021-01196-z

Cited by 16 publications

(15 citation statements)

References 42 publications

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“…The early decrease in Z′, Z″ with frequency could be related to a slow dynamic relaxation procedure in the materials, possibly due to the release of space charges at higher frequencies. [41][42][43] Figures 6a-6g illustrates the typical curves of Z″ vs Z′ for Au/CNT/TiO 2 /SiO 2 /p-Si/Al heterostructure. The applied voltages and temperatures ranged from −2 V to 2 V and 243-343 K, respectively.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO₂/SiO₂/p-Si/Al

Ashery

Gad

Gaballah

et al. 2021

ECS J. Solid State Sci. Technol.

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In this paper, we synthesized a novel structure of Au/CNTs/TiO 2 /SiO 2 /p-Si/Al that hasn't been explored before. The real and imaginary parts of impedance, as well as Cole-Cole diagrams, have positive and negative values with varying temperatures, frequencies, and voltages. The real and imaginary parts of the electric modulus show the same behavior, with peaks appearing for all temperatures and voltage of V = −2 V and V = −1 V, while two peaks exist at all temperatures for the imaginary modulus part (M″) at V = 0 V and V = 1 V, the values of M′ is seen higher than M″. The Cole-Cole diagram of M″ with M′ has shown one semicircle and two semicircles at the same mentioned voltages. The oxide layer thickness (d ox ), the density distribution (N ss ), the maximum admittance (Y m ), the maximum electric field (E m ), the depletion layer width (W d ), and ΔΦ b (eV) were examined by theAs the frequency increases, the Φ b(C−V) increases, while the concentration of donor atoms (N D ) decreases. The surface states (N ss ) voltage-dependent profile was calculated and evaluated.

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Section: Resultsmentioning

confidence: 99%

Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO₂/SiO₂/p-Si/Al

Ashery

Gad

Gaballah

et al. 2021

ECS J. Solid State Sci. Technol.

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“…A similar result has been obtained in different references. For example, the effect of PVP: BaTiO 3 interlayer in MS structure has increased the dielectric constant by 5 times [24]. In another research [14], the results have shown that the PVP: Co-TeO 2 polymer interfacial layer has increased the dielectric constant of MPS by almost 10 times compared to MS.…”

Section: Dielectric Propertiesmentioning

confidence: 97%

“…Figure 7(C) shows the tanδ-f plot has like hyperbola curve with two negative branches in low frequencies (f1.5 kHz) and positive branches at high frequencies (f1.5 kHz). According to 1 C equation, negative branches correspond to the negative value of ε′ and the positive value of ε′ in the range f 1.5 kHz, and the positive branch corresponding to the positive value of both of them in f 1.5 kHz [21,24,25].…”

Section: Dielectric Propertiesmentioning

confidence: 99%

The investigation of interlayer (CeO₂:PVC) effects on the dielectric features of Au-Si (MS) Schottky barrier diodes (SBDs) using the impedance spectroscopy method

et al. 2023

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In this research, Au-PVC-Si (MPS1), Au-(CeO2: PVC)-Si (MPS2) Schottky barrier diodes (SBDs) have been grown on n-type silicon (n-Si) with the aim of investigating the frequency dependence and the effect of polymer interlayer on dielectric parameters such as complex dielectric constant (ε = ɛ′ − iɛ″), ac-conductivity (σac), and complex electric-modulus (M = M′ + iM″). For this purpose, the mentioned parameters have been calculated by measuring C/G-f in wide-range frequency (100Hz-1MHz) at room temperature for all three diodes and how the effect of PVC and (CeO2: PVC) interlayer on dielectric parameters of Au-Si (MS) has been studied. In the low-frequency range, plot C-f shows a negative capacitance behavior (NC) that causes the dielectric constant to be negative in this frequency range. Such negative behavior can be described using capture and emissions of carriers at interface states. The results of examining the frequency dependence of dielectric parameters showed that these parameters are sensitive to the frequency, especially the low-frequency range, which is due to the surface polarization and interface states. Also, the conduction mechanism of samples was investigated through the slope of the lnσac- lnω plot. The σac value for all three diodes at low frequencies is almost independent of the frequency, which is related to dc conductivity (σdc). The slope value of the lnσac- lnω plot in the high frequencies was smaller than the unit which can be described by the hopping mechanism. The presence of the PVC and (PVC: CeO2) interlayer in the metal-semiconductor junction has increased the dielectric constant and conductivity of MPS compared to MS-type SBDs.

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“…Graphene is a two-dimensional structure composed of a single layer of hexagonal carbon and it has extraordinary such as high density and mobility, optical conductivity, and mechanical properties [38]. Therefore, it has been considered a very suitable candidate for replacing Si in the photonic and electronic instruments [39]. When single layer of graphene is placed on top of each other, they form a three-dimensional bulk of graphite, and the van der Waals force bonds the plates and the distance among them is about 0.335 nm [39].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, it has been considered a very suitable candidate for replacing Si in the photonic and electronic instruments [39]. When single layer of graphene is placed on top of each other, they form a three-dimensional bulk of graphite, and the van der Waals force bonds the plates and the distance among them is about 0.335 nm [39]. Polyvinyl pyrrolidine (PVP) is also an excellent polymer used to fabricate the MPS-type SD and it being constructed quickly and inexpensively, having suitable conductivity, high stability, and having no toxic effects [40].…”

Section: Introductionmentioning

confidence: 99%

Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO₃ polymer layers at Schottky diode (SD)

Barkhordari

Mashayekhi

Amiri

et al. 2023

Semicond. Sci. Technol.

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In this paper, a polyvinyl pyrrolidine (PVP) polymer layer is inserted between the metal-semiconductor (MS) structure to manufacture a metal-polymer-semiconductor (MPS) structure or Schottky diode (SD). The zinc titanate and graphene nanostructures were doped into the PVP layer individually and together to improve the electrical performance of the MPS-type SD. The crystalline size, surface morphology, and band gap energy of the ZnTiO3 nanostructures are examined by the X-Ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM), and ultraviolet-visible (UV-Vis) spectroscopy, respectively. It is common to measure the current-voltage (I-V) features (at ±3 V) of these five structures for calculating the reverse saturation current (I0), barrier height (BH), ideality factor (n), series (Rs), and shunt (Rsh) resistances as the main electrical parameters utilizing the Thermionic Emission (TE), Norde, and Cheung models. Also, the forwarded-bias energy-dependent surface states density (Nss) and the forward/reverse biased current conduction mechanisms (CCMs) are studied and discussed. The rectifying ratio (RR) of Al/PVP: Gr-ZnTiO3/p-Si SD has the highest increase among these five SDs while the lowest I0 and highest Rsh are related to the Al/PVP:Gr/p-Si (MPS2) and Al/PVP:ZnTiO3/p-Si (MPS3) SDs, respectively. Therefore, doping Gr into the PVP interlayer increases the electrical conduction in the SDs although PVP: Gr-ZnTiO3 polymer layer improves the RR of SDs.

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Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure

Cited by 16 publications

References 42 publications

Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO₂/SiO₂/p-Si/Al

Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO₂/SiO₂/p-Si/Al

The investigation of interlayer (CeO₂:PVC) effects on the dielectric features of Au-Si (MS) Schottky barrier diodes (SBDs) using the impedance spectroscopy method

Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO₃ polymer layers at Schottky diode (SD)

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Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure

Cited by 16 publications

References 42 publications

Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO2/SiO2/p-Si/Al

Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO2/SiO2/p-Si/Al

The investigation of interlayer (CeO2:PVC) effects on the dielectric features of Au-Si (MS) Schottky barrier diodes (SBDs) using the impedance spectroscopy method

Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO3 polymer layers at Schottky diode (SD)

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Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO₂/SiO₂/p-Si/Al

Investigation of Dielectric Properties of a Novel Structure Au/CNTs/TiO₂/SiO₂/p-Si/Al

The investigation of interlayer (CeO₂:PVC) effects on the dielectric features of Au-Si (MS) Schottky barrier diodes (SBDs) using the impedance spectroscopy method

Role of graphene nanoparticles on the electrophysical processes in PVP and PVP:ZnTiO₃ polymer layers at Schottky diode (SD)