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We produced a graphene oxide with good conductivity by a novel method that saves cost and time as illustrated in the structure Au/GO/TiO2/Si/Al. The GO was synthesized by burning polyvinyl alcohol at 300 °C on the TiO2/n-Si surface producing a conductive graphene oxide that is considered a new advantage of this technique. The Au/GO/TiO2/n-Si/Al structure is manufactured using the spin coating process. The XRD and SEM identified the samples’ structure and surface topography. In a frequency range from 10 kHz to 20 MHz, the electrical and dielectric parameters of the synthetic Schottky diodes were obtained from capacitance/conductance-voltage. The diagram of real and imaginary parts of the impedance (Z′, Z″), col-col, and their variation with temperatures, voltage, and frequency were also discussed. A comparison of electrical parameters such as ideality factor (n), series resistance (Rs), barrier height (Φb) based on traditional, Cheung, and Norde methods was investigated. The oxide layer thickness values (dox), the density distribution (Nss), the maximum admittance (Ym), the maximum electric field (Em), the depletion layer width (Wd), and ΔΦb (eV) were investigated using the C2 − V relationship. As the frequency increases, the Φb(C−V) increases, while the concentration of donor atoms (ND) decreases. The surface states (Nss) voltage-dependent profile was calculated and evaluated.

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The novel in this article is the appearance of negative capacitance at low frequency in this structure carbon nanotube/TiO2/SiO2/p-Si, which has not been studied yet in terms of its structural, electrical, and dielectric properties. The CNT/TiO2/SiO2/p-Si was synthesized as a metal oxide semiconductor (MOS) structure. The structural, electrical, dielectric, and capacitance were investigated by XRD, I-V, and C-V measurements. Besides the electrical properties, we present here a comprehensive study of capacitance and its variation with frequency, voltage, and temperature. Through this study, we can control and tune the capacitance in terms of its value as well as its signal polarity as positive or negative values the tunneling behavior and negative resistance were realized in I-V measurements. The capacitance vs temperature, voltage, and frequency was explored, it takes positive values reaching its maximum of about 2.12 × 10−9–2.4 × 10−7 F at high frequencies from 2 × 107–103 Hz, but at low frequency from 103–10 Hz, it takes high positive and negative values to reach 4 × 10−3–5 × 10−3 F respectively.

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