Dielectric properties of polymer composites with TlInSe2 semiconductor filler

Godzhaev, E. M.; Магеррамов, А. М.; Safarova, S. I.; Nuriev, M. A.; Ragimov, R. S.

doi:10.3103/s1068375508060094

Cited by 17 publications

(2 citation statements)

References 5 publications

(9 reference statements)

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“…Some of the physical properties of the TlInSe 2 compound have been investigated. In particular, reports on: specific heat capacities 3, piezoelectric properties 4, optical and electrical properties 5, 6, dielectric measurements 7, and thermoelectric power 8 have been published. In the present work, we will study: the effect of Ag and In contacts on the I – V characteristics of the TlInSe 2 crystals, the detection response time and stability, and light illumination dependence of photocurrent.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Ag/TlInSe₂/Ag structure

Qasrawi

Gasanly

2011

Physica Status Solidi (a)

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In this work, the current-voltage characteristics of Ag/TlInSe 2 / Ag and In/TlInSe 2 /In structures, the incident light intensity and time dependencies of photocurrent as well as the response timeillumination intensity dependence of Ag/TlInSe 2 /Ag structures have been studied. For bias voltages larger than 120.0 and 4.0 V, the current injection was found to be space-charge limited and was assigned to the existing of deep and shallow hole traps being located at 210 and 16 meV for Ag and In-contacted samples, respectively. While indium-contacted samples show S-shaped I-V dependence above bias voltage of 10.0 V, silver contacted samples does not show this behavior even at 200.0 V.For the Ag/TlInSe 2 /Ag structure, photocurrent was observed to exhibit stable values in a very short period of time. The device response time decreases with increasing illumination intensity, it exhibits a value of 0.13 s at incident light intensity of 53.6 mW cm À2 . The decrement in response time with increasing illumination intensity is associated with an increment in photocurrent at the same ratio. The ohmic behavior up to high voltages (120 V), the fast response time and the large spatial photocurrent make the Ag/TlInSe 2 /Ag structure promising IR detectors.

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Section: Introductionmentioning

confidence: 99%

Characterization of Ag/TlInSe₂/Ag structure

Qasrawi

Gasanly

2011

Physica Status Solidi (a)

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“…Particularly, reports on: specific heat capacities [4], piezoelectric properties [5], optical and electrical properties [6,7], dielectric measurements [8] and thermoelectric power [9] have been published. TlInSe 2 has the indirect and direct optical band gaps E gi = 1.07 eV and E gd = 1.35 eV at room temperature, respectively [10].…”

Section: Introductionmentioning

confidence: 99%

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Gasanly

Yıldırım

2011

Acta Phys. Pol. A

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Thermally stimulated current measurements were carried out on as-grown TlInSe 2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s −1 . The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × 10 13 and 3.4 × 10 12 cm −3 ) and capture cross section (4.1 × 10 −28 and 2.9 × 10 −26 cm 2 ) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.

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Mixed conduction and anisotropic single oscillator parameters in low dimensional TlInSe2 crystals

Qasrawi

Gasanly

2013

Materials Chemistry and Physics

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Dielectric properties of polymer composites with TlInSe2 semiconductor filler

Cited by 17 publications

References 5 publications

Characterization of Ag/TlInSe₂/Ag structure

Characterization of Ag/TlInSe₂/Ag structure

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals

Mixed conduction and anisotropic single oscillator parameters in low dimensional TlInSe2 crystals

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Dielectric properties of polymer composites with TlInSe2 semiconductor filler

Cited by 17 publications

References 5 publications

Characterization of Ag/TlInSe2/Ag structure

Characterization of Ag/TlInSe2/Ag structure

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2Chain Crystals

Mixed conduction and anisotropic single oscillator parameters in low dimensional TlInSe2 crystals

Contact Info

Product

Resources

About

Characterization of Ag/TlInSe₂/Ag structure

Characterization of Ag/TlInSe₂/Ag structure

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe₂Chain Crystals