Characterization of Ag/TlInSe₂/Ag structure

Abstract

In this work, the current-voltage characteristics of Ag/TlInSe 2 / Ag and In/TlInSe 2 /In structures, the incident light intensity and time dependencies of photocurrent as well as the response timeillumination intensity dependence of Ag/TlInSe 2 /Ag structures have been studied. For bias voltages larger than 120.0 and 4.0 V, the current injection was found to be space-charge limited and was assigned to the existing of deep and shallow hole traps being located at 210 and 16 meV for Ag and In-contacted samples, respectively. While indium-contacted samples show S-shaped I-V dependence above bias voltage of 10.0 V, silver contacted samples does not show this behavior even at 200.0 V.For the Ag/TlInSe 2 /Ag structure, photocurrent was observed to exhibit stable values in a very short period of time. The device response time decreases with increasing illumination intensity, it exhibits a value of 0.13 s at incident light intensity of 53.6 mW cm À2 . The decrement in response time with increasing illumination intensity is associated with an increment in photocurrent at the same ratio. The ohmic behavior up to high voltages (120 V), the fast response time and the large spatial photocurrent make the Ag/TlInSe 2 /Ag structure promising IR detectors.

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

“…Similar behavior to ours have also been reported by others. 20,23,[29][30][31][32][33][34] Due to these observations, we concluded that the possible conduction mechanism in this sample is SCLC. 29,35 In the SCLC transport, the current suddenly increases.…”

“…This type of high field conduction mechanism has also been found in some other materials. 30,37,38 Temperature Dependence of the Threshold Voltage V th…”