Dielectric Properties and Strain Analysis in Paraelectric ZrTiO₄Thin Films Deposited by DC Magnetron Sputtering

Abstract

The dielectric constants and dielectric losses of ZrTiO 4 thin films deposited by DC magnetron reactive sputtering were investigated. The paraelectric properties were measured in the 100 kHz range, and compared with an equivalent circuit model. As the deposition temperature increased (up to 600 • C), the dielectric losses (tan δ) decreased (down to 0.017 ± 0.007), while the dielectric constants (ε) were in the range of 35 ± 7. Post annealing at 800 • C in oxygen for 2 h reduced tan δ down to 0.005 ± 0.001, higher than those of well-sintered bulk ZrTiO 4 . The systematic trend of tan δ as a function of deposition temperature and post annealing showed good correlations with strains in ZrTiO 4 thin films deduced from the broadening of X-ray diffraction peak.

Influence of the Microstructures on the Dielectric Properties of ZrTiO4Thin Films at Microwave-Frequency Range

“…The series resistor in this equivalent-circuit model represents the difference (in two test structures) in both the resistance from the electrodes and the contact resistance. 11,12,24) The impedance of the equivalent circuit can be expressed in the following equations:…”

“…Previous studies were focused on the dielectric properties around the MHz frequency range, leakage current, and optical index of refraction. [11][12][13][14][15][16] However, the dielectric properties of these thin films in the microwave ranges have not been reported yet. Therefore, in this paper, the effects of deposition temperature and incident power density on the dielectric losses and dielectric constants in the microwave range are reported.…”

Structure and Properties of Zrtio4 Thin Films Prepared by Reactive Magnetron Co-Sputtering Without Heating

“…The change in the dielectric constants due to the variation in the deposition temperature [5]. Moreover, those the correlation between the micro strain and dielectric loss of ZrTiO4 thin films were studied.…”

Influence of the annealing treatment on the structure, morphology, and corrosion resistance of sputtered Zr‐Ti‐Si‐O coatings used for biomedical applications

“…For example, zirconium titanate (ZrTiO 4 ) is a well‐known ceramic material, being suitable for manufacturing electrical and optical devices such as capacitors, piezoelectric sensors, ultrasonic motors, and dielectric devices in microwaves, due to its high permittivity in the microwave frequency . Kim et al showed that the ZrTiO 4 prepared by magnetron sputtering at 600 °C and annealed in an oxygen atmosphere at 800 °C for 2 h exhibited good dielectric properties, which can be sufficient for contacts, electrodes, and dielectric itself, and stray inductance of the contacts and wires . Recently it was reported the superior biocompatibility of TiO 2 –ZrO 2 –ZrTiO 4 nanotubes .…”