Die Selbstdiffusionsgeschwindigkeit des geschmolzenen Bleis

Hevesy, G.

doi:10.1002/andp.19203681705

Cited by 57 publications

(18 citation statements)

References 6 publications

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“…Von Hevesy first proposed and demonstrated the idea in 1920, [3][4][5] work for which he was later awarded a Nobel Prize. From the 1950s onward, with the spread of nuclear reactors and accelerators, a huge variety of suitable radioisotopes became available (suitable meaning that the half-life of the radioisotope is much longer than the time of the diffusion anneal), and it was then possible to study tracer diffusion in numerous material systems.…”

Section: Kinetics With Secondary Ion Mass Spectrometrymentioning

confidence: 99%

Probing Diffusion Kinetics with Secondary Ion Mass Spectrometry

Souza¹,

Martin²

2009

MRS Bull.

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Secondary ion mass spectrometry (SIMS) is a powerful analytical technique for determining elemental and isotopic distributions in solids. One of its main attractions to researchers in the field of solid-state ionics is its ability to distinguish between isotopes of the same chemical element as a function of position in a solid. With enriched stable isotopes as diffusion sources, this allows self-diffusion kinetics in solids to be studied. In this article, taking oxygen isotope diffusion in oxides as our main example, we present the standard experimental method, and, subsequently, we discuss several promising developments, in particular the opportunities offered by thin-film geometries, and the investigation of inhomogeneous systems, including possible fast diffusion along grain boundaries and making space-charge layers at interfaces "visible." These examples demonstrate that SIMS is capable of probing mass transport processes over various length scales, ranging from some nanometers to hundreds of micrometers.

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Section: Kinetics With Secondary Ion Mass Spectrometrymentioning

confidence: 99%

Probing Diffusion Kinetics with Secondary Ion Mass Spectrometry

Souza¹,

Martin²

2009

MRS Bull.

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“…The sensitivity is increased by orders of magnitude and, when combined with ion implantation, it avoids the deposition of thin transition-metal layer on the amorphous material which leads to significant modifications of the recrystallization temperatures. Back in the twenties, the first solid state physics experiment using radioisotopes was reported by G. v. Hevesy with the study of self-diffusion in solid lead (1921) by using the natural radioactive isotopes 210 Pb and 212 Pb [29]. An older example of such a kind of studies at ISOLDE is the finding of anomalous diffusion of low concentrations of gold in amorphous silicon, where it is shown that interstitial diffusion of Au in a-Si is significantly retarded by the presence of intrinsic defects, presumably immobile vacancy-type defects which trap the Au atoms [30].…”

Section: Diffusion Studiesmentioning

confidence: 99%

Nuclear radioactive techniques applied to materials research

Correia¹,

Johnston

Wahl

2011

Ract

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“…The crystalline structure of solids has become a fundamental aspect in the modern understanding of solid-state diffusion mechanisms. Becquerel's discovery led to the pioneering work of Georg Hevesy, who first used radioactive isotopes as diffusion tracers [Groh, 1920]. Hevesy's work on the diffusion of radioactive lead isotopes in solid lead enabled the study of self-diffusion in solids [Groh, 1921;Hevesy, 1925].…”

Section: A Brief History Of Diffusionmentioning

confidence: 99%

Diffusion in silicon isotope heterostructures

Silvestri¹

2004

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The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and 28 Si enriched layers, enables the observation of 30 Si self-diffusion from the natural layers into the 28 Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and selfdiffusion.The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion mechanisms, the native defect charge states, and the self-and dopant diffusion coefficients can be determined. This information is necessary to enhance the physical modeling of dopant diffusion in Si. It is of particular interest to the modeling of pushing me to achieve. I am grateful to Ana for her unwavering love and support, for giving me the time during this busy year to write this thesis, but also for knowing when I need a break.

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Die Selbstdiffusionsgeschwindigkeit des geschmolzenen Bleis

Cited by 57 publications

References 6 publications

Probing Diffusion Kinetics with Secondary Ion Mass Spectrometry

Probing Diffusion Kinetics with Secondary Ion Mass Spectrometry

Nuclear radioactive techniques applied to materials research

Diffusion in silicon isotope heterostructures

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