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Oxygen transport in rare-earth oxide (RE(2)O(3)) doped CeO(2) with fluorite structure has attracted considerable attention owing to both the range of practical usage (e.g., fuel cells, sensors, etc.) and the fundamental fascination of fast oxide ion transport in crystalline solids. Using density-functional theory, we have calculated the formation energies of point defects and their migration properties in RE(2)O(3) doped CeO(2)(RE = Sc, Y, La, Nd, Sm, Gd, Dy, and Lu). The calculated results show that oxygen vacancies are the dominant defect species obtained by RE(3+) doping. They form associates with the RE(3+) ions, and the corresponding defect association energy is a strong function of the ionic radii of the RE(3+) dopants. The migration of an oxygen vacancy was investigated using the nudged elastic band method. The lowest activation energy for oxygen vacancy hopping is obtained for a straightforward migration path between two adjacent oxygen sites. The migration energy of an oxygen vacancy also strongly depends on the ionic radii of the neighbouring dopant cations. Accordingly, we have identified two factors that affect the oxygen vacancy migration; (1) trapping (or repelling) of an oxygen vacancy at the NN site of the RE(3+) dopant, and (2) reduction (or enlargement) of the migration barrier by RE(3+) doping. These findings provide insight for atomistic level understanding of ionic conductivity in doped ceria and would be beneficial for optimizing ionic conductivity.

Materials with high oxygen ion conductivity and low electronic conductivity are required for electrolytes in solid oxide fuel cells (SOFC) and high-temperature electrolysis (SOEC). A potential candidate for the electrolytes, which separate oxidation and reduction processes, is rare-earth doped ceria. The prediction of the ionic conductivity of the electrolytes and a better understanding of the underlying atomistic mechanisms provide an important contribution to the future of sustainable and efficient energy conversion and storage. The central aim of this paper is the detailed investigation of the relationship between defect interactions at the microscopic level and the macroscopic oxygen ion conductivity in the bulk of doped ceria. By combining ab initio density functional theory (DFT) with Kinetic Monte Carlo (KMC) simulations, the oxygen ion conductivity is predicted as a function of the doping concentration. Migration barriers are analyzed for energy contributions, which are caused by the interactions of dopants and vacancies with the migrating oxygen vacancy. We clearly distinguish between energy contributions that are either uniform for forward and backward jumps or favor one migration direction over the reverse direction. If the presence of a dopant changes the migration energy identically for forward and backward jumps, the resulting energy contribution is referred to as blocking. If the change in migration energy due to doping is different for forward and backward jumps of a specific ionic configuration, the resulting energy contributions are referred to as trapping. The influence of both effects on the ionic conductivity is analyzed: blocking determines the dopant fraction where the ionic conductivity exhibits the maximum. Trapping limits the maximum ionic conductivity value. In this way, a deeper understanding of the underlying mechanisms determining the influence of dopants on the ionic conductivity is obtained and the ionic conductivity is predicted more accurately. The detailed results and insights obtained here for doped ceria can be generalized and applied to other ion conductors that are important for SOFCs and SOECs as well as solid state batteries.

We investigate the dopant distribution and its influence on the oxygen ion conductivity of ceria doped with rare earth oxides by combining density functional theory and Monte Carlo simulations. We calculate the association energies of dopant pairs, oxygen vacancy pairs and between dopant ions and oxygen vacancies by means of DFT + U including finite size corrections. The cation coordination numbers from ensuing Metropolis Monte Carlo simulations show remarkable agreement with experimental data. Combining Metropolis and Kinetic Monte Carlo simulations we find a distinct dependence of the ionic conductivity on the dopant distribution and predict long term degradation of electrolytes based on doped ceria.

The decomposition of the cubic perovskite-type oxide Ba(x)Sr(1-x)Co(0.8)Fe(0.2)O(3-delta) (BSCF) into hexagonal and cubic perovskite-type phases has been examined by means of Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Selected Area Electron Diffraction (SAED) and X-Ray Diffraction (XRD). SEM and TEM measurements reveal that the new hexagonal phase grows predominantly at the grain boundaries of BSCF ceramics and that the cation composition of the newly formed hexagonal phase differs from that of the starting material. An orientational relationship between the hexagonal and the parent cubic phase was also observed. By means of ex situ XRD the phase fraction of the hexagonal phase was determined as a function of annealing time. A kinetic analysis of the data, based on Avrami-type kinetics, indicates that the decomposition is independent of the initial A-site composition, and the obtained reaction order supports the conclusion that the hexagonal phase grows at the grain boundaries in dense ceramic samples.

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Insulator-metal transitions are well known in transition metal oxides, but inducing an insulator-metal transition in the oxide of a main group element is a major challenge. Here we report the observation of an insulator-metal transition, with a conductivity jump of seven orders of magnitude, in highly non-stoichiometric, amorphous gallium oxide of approximate composition GaO 1.2 at a temperature around 670 K. We demonstrate through experimental studies and density-functional-theory calculations that the conductivity jump takes place at a critical gallium concentration and is induced by crystallization of stoichiometric Ga 2 O 3 within the metastable oxide matrix -in chemical terms by a disproportionation. This novel mechanism -an insulator-metal transition driven by a heterogeneous solid state reactionopens up a new route to achieve metallic behaviour in oxides that are expected to exist only as classic insulators.Insulator-metal transitions belong to the most fascinating phenomena in condensed-matter physics 1,2 . Since Mott's landmark work 3,4 it has been known that in crystalline solids strong electron-electron interactions can cause an insulator-metal transition. One example is crystalline Cr-doped vanadium oxide, (V 1-x Cr x ) 2 O 3 , which shows a Mott transition from a paramagnetic Mott insulator to a strongly correlated metal upon an increase in pressure, a lowering of temperature, or a decrease in dopant level 5,6 . In non-crystalline solids structural disorder can also lead to an insulator-metal transition on account of Anderson localization 7 .As shown by Anderson 7 and Mott 8 , in any non-crystalline material the lowest states in the conduction band are localized, i.e. they are electron traps. Only for energies above the mobility edge, E c , do states become non-localized or extended. If the Fermi energy E F is below the mobility edge, states at the Fermi level are localized and the material is an electronic insulator. If, however, the number of electrons increases and the Fermi energy rises above the mobility edge, the material becomes metallic (Anderson transition). As transition metals change their valence state easily, most examples of insulator-metal transitions concern transition metal compounds 4-6,9-11 . The above considerations do not, however, exclude the possibility of inducing an insulator-metal transition in a simple binary oxide of a main group element, even without doping. Instead, large deviations from the ideal stoichiometry, i.e. high defect concentrations, provide a high concentration of electronic defects (self-doping). And if, in addition, the oxide is amorphous, there are two phenomena, strong structural disorder and strong chemical disorder, which could result in an insulator-metal transition.Here we report such a case: Highly non-stoichiometric, amorphous gallium oxide with an approximate chemical composition GaO 1.2 shows an unprecedented insulator-metal transition, with a jump in conductivity of ca. 7 orders of magnitude at temperatures as high as 670 K. We show that this in...