Die-scale wafer flatness: 3D imaging across 20 mm with nanometer-scale resolution

Miller, Kirk; Fong, David; Dawson, Dean; Todd, Bradley

doi:10.1117/12.473527

Cited by 4 publications

(3 citation statements)

References 5 publications

(5 reference statements)

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“…Because of shortening the depth-of-focus in lithography, requirements of better flatness over a stepper field after CMP is becoming severer. 12 Realizing the flatness of less than 100 nm in a stepper field (e.g. 40 x 25 mm) is required to CMP tools.…”

Section: Flatness Measurement After Cmpmentioning

confidence: 99%

New inline AFM metrology tool suited for LSI manufacturing at the 45-nm node and beyond

et al. 2007

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A new inline metrology tool utilizing atomic force microscope (AFM) suited for LSI manufacturing at the 45-nm node and beyond has been developed. The developed AFM is featuring both of high-speed wafer processing (throughput: 30 WPH) and high-precision measurement (static repeatability: 0.5nm in 3σ). Several types of carbon nanotube (CNT) probes specially designed for the AFM have also been developed. The combination of Advanced StepIn TM mode and CNT probes realizes high precision measurement for high-aspect-ratio samples such as photoresist patterns. In Advanced StepIn TM mode, a probe tip approaches and contacts a sample surface, and then moves away from the surface and toward a new measurement position. A series of these actions is performed in a short time (3.8 ms for single measurement point) full-automatically. Advanced StepIn TM mode not only ensures gentle probe tip contact and precise measurement of high aspect ratio samples, but also minimum tip wear. CNT probes can provide long term performance, while eliminating the need for probe exchange. The developed AFM also realizes flatness measurement of 10-nm level in a wide area of 40x40-mm maximum. This performance is sufficient for the evaluation of CMP processes at the 45-nm node.

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Section: Flatness Measurement After Cmpmentioning

confidence: 99%

New inline AFM metrology tool suited for LSI manufacturing at the 45-nm node and beyond

et al. 2007

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“…In the recent miniaturization of circuits, the scanning probe microscope (SPM) has become a promising candidate for evaluating the critical dimension (CD) of devices. 1) The SPM offers high-resolution, three-dimensional measurements and precise positioning capabilities. In case of the shallow trench isolation (STI), as the aspect ratio (depth/ width) of the trench is greater than 7, it is quite difficult to measure the exact shape of the trench.…”

Section: Introductionmentioning

confidence: 99%

Critical Dimension Measurement Using New Scanning Mode and Aligned Carbon Nanotube Scanning Probe Microscope Tip

Yasutake¹,

Watanabe²,

Wakiyama³

et al. 2006

jjap

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We have developed a new scanning mode and an aligned carbon nanotube tip for atomic force microscopy (AFM) for measuring the critical dimension of deep structures. The aligned carbon nanotube (A-CNT) was assembled in the scanning electron microscope (SEM) chamber. The diameter of the tip is uniformly around 20 nm and the tip attachment angle is within ±1.5° to the sample normal. The aspect ratio (length/diameter) of the tip is greater than 30. The new scanning mode is composed of two functions, namely transporting the tip along the steep trench structure and detecting the sample surface. This mode can faithfully trace the steep side wall using a flexible CNT tip without damaging the tip. The critical dimension (CD) measurements of the shallow trench isolation (STI) were performed using the newly developed scanning mode and the A-CNT tip.

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“…In recent miniaturization of circuits, the scanning probe microscope (SPM) is a promising candidate for evaluating the critical dimension (CD) of devices [1]. In case of shallow trench isolation, the aspect ratio (depth/width) of the trench is greater than 7/1.…”

Section: Introductionmentioning

confidence: 99%

Tungsten Deposited Scanning Probe Microscope Tips for Critical Dimension Measurement

Yasutake¹,

Kaito²,

Wakiyama³

2003

AIP Conference Proceedings

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We fabricated a robust and high aspect ratio tungsten deposited tip (TD tip) using a Focused Ion Beam (FIB). This tip was well controlled during fabrication. Tip diameter is uniform at around 90nm and its growing length is proportional to the irradiation time of the ion beam. Tip shape is a cylindrical pillar and aspect ratio (length/diameter) is greater than 10. Growing angle of the tip is identical to the incident angle of the ion beam. Critical dimension (CD) measurement of shallow trench isolation (STI) was performed using this tip.

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Die-scale wafer flatness: 3D imaging across 20 mm with nanometer-scale resolution

Cited by 4 publications

References 5 publications

New inline AFM metrology tool suited for LSI manufacturing at the 45-nm node and beyond

New inline AFM metrology tool suited for LSI manufacturing at the 45-nm node and beyond

Critical Dimension Measurement Using New Scanning Mode and Aligned Carbon Nanotube Scanning Probe Microscope Tip

Tungsten Deposited Scanning Probe Microscope Tips for Critical Dimension Measurement

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